Light-emitting diode emitting at 650 nm with 200-MHz small-signal modulation bandwidth

Light-emitting diode emitting at 650 nm with 200-MHz small-signal modulation bandwidth

State-of-the-art modulation bandwidths are presented for multiquantum well resonant cavity light emitting diodes (RCLED's) emitting at 650 nm. 84-μm size epoxy coated RCLED's have a 1.4-mW (CW) output power and a small signal modulation bandwidth of 200 MHz at 40 mA bias. 150-μm diameter d...

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Veröffentlicht in:IEEE photonics technology letters 2000-07, Vol.12 (7), p.786-788
Hauptverfasser: Guina, M., Orsila, S., Dumitrescu, M., Saarinen, M., Sipila, P., Vilokkinen, V., Roycroft, B., Uusimaa, P., Toivonen, M., Pessa, M.
Format: Artikel
Sprache:eng
Schlagworte:
Bandwidth
Bias
Costs
Data communication
Devices
Emittance
Holes
Light emitting diodes
Modulation
Optical coupling
Optical fibers
Optical modulation
Resonance
Semiconductor diodes
State of the art
Transfer functions
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Beschreibung
Zusammenfassung:State-of-the-art modulation bandwidths are presented for multiquantum well resonant cavity light emitting diodes (RCLED's) emitting at 650 nm. 84-μm size epoxy coated RCLED's have a 1.4-mW (CW) output power and a small signal modulation bandwidth of 200 MHz at 40 mA bias. 150-μm diameter devices yield 3.25-mW and 150-MHz bandwidth at 70-mA bias. An open eye-diagram at 622 Mb/s achieved for the 84-μm device makes it very attractive for SONET OC-12 data communication links.
ISSN:1041-1135
1941-0174
DOI:10.1109/68.853500