Technologies to improve photo-sensitivity and reduce VOD shutter voltage for CCD image sensors
New technologies to increase the photo-sensitivity and reduce the shutter voltage of the vertical over-flow-drain (VOD) have been developed for CCD image sensors. The photo-sensitivity was increased 40% by forming an anti-reflection film over the photodiode and reducing the thickness of the p/sup +/...
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| Veröffentlicht in: | IEEE transactions on electron devices 2000-08, Vol.47 (8), p.1566-1572 |
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| container_end_page | 1572 |
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| container_title | IEEE transactions on electron devices |
| container_volume | 47 |
| creator | Murakami, I. Nakano, T. Hatano, K. Nakashiba, Y. Furumiya, M. Nagata, T. Kawasaki, T. Utsumi, H. Uchiya, S. Arai, K. Mutoh, N. Kohno, A. Teranishi, N. Hokari, Y. |
| description | New technologies to increase the photo-sensitivity and reduce the shutter voltage of the vertical over-flow-drain (VOD) have been developed for CCD image sensors. The photo-sensitivity was increased 40% by forming an anti-reflection film over the photodiode and reducing the thickness of the p/sup +/-layer formed at the photodiode surface. The VOD shutter voltage was reduced from 31 to 18 V by using an epitaxially grown substrate with double impurity concentration layers. |
| doi_str_mv | 10.1109/16.853032 |
| format | Article |
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(IEEE) 2000</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c367t-df79990ca43746578a5ce567fd946619ef9618298a104201c138db2e63271cfb3</citedby><cites>FETCH-LOGICAL-c367t-df79990ca43746578a5ce567fd946619ef9618298a104201c138db2e63271cfb3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/853032$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,796,27924,27925,54758</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/853032$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Murakami, I.</creatorcontrib><creatorcontrib>Nakano, T.</creatorcontrib><creatorcontrib>Hatano, K.</creatorcontrib><creatorcontrib>Nakashiba, Y.</creatorcontrib><creatorcontrib>Furumiya, M.</creatorcontrib><creatorcontrib>Nagata, T.</creatorcontrib><creatorcontrib>Kawasaki, T.</creatorcontrib><creatorcontrib>Utsumi, H.</creatorcontrib><creatorcontrib>Uchiya, S.</creatorcontrib><creatorcontrib>Arai, K.</creatorcontrib><creatorcontrib>Mutoh, N.</creatorcontrib><creatorcontrib>Kohno, A.</creatorcontrib><creatorcontrib>Teranishi, N.</creatorcontrib><creatorcontrib>Hokari, Y.</creatorcontrib><title>Technologies to improve photo-sensitivity and reduce VOD shutter voltage for CCD image sensors</title><title>IEEE transactions on electron devices</title><addtitle>TED</addtitle><description>New technologies to increase the photo-sensitivity and reduce the shutter voltage of the vertical over-flow-drain (VOD) have been developed for CCD image sensors. 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| source | IEEE Electronic Library (IEL) |
| subjects | Charge coupled devices Charge coupled image sensors Electric potential Photodiodes Sensors Shutters Video on demand Voltage |
| title | Technologies to improve photo-sensitivity and reduce VOD shutter voltage for CCD image sensors |
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