Technologies to improve photo-sensitivity and reduce VOD shutter voltage for CCD image sensors

Technologies to improve photo-sensitivity and reduce VOD shutter voltage for CCD image sensors

New technologies to increase the photo-sensitivity and reduce the shutter voltage of the vertical over-flow-drain (VOD) have been developed for CCD image sensors. The photo-sensitivity was increased 40% by forming an anti-reflection film over the photodiode and reducing the thickness of the p/sup +/...

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Veröffentlicht in:IEEE transactions on electron devices 2000-08, Vol.47 (8), p.1566-1572
Hauptverfasser: Murakami, I., Nakano, T., Hatano, K., Nakashiba, Y., Furumiya, M., Nagata, T., Kawasaki, T., Utsumi, H., Uchiya, S., Arai, K., Mutoh, N., Kohno, A., Teranishi, N., Hokari, Y.
Format: Artikel
Sprache:eng
Schlagworte:
Charge coupled devices
Charge coupled image sensors
Electric potential
Photodiodes
Sensors
Shutters
Video on demand
Voltage
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Beschreibung
Zusammenfassung:New technologies to increase the photo-sensitivity and reduce the shutter voltage of the vertical over-flow-drain (VOD) have been developed for CCD image sensors. The photo-sensitivity was increased 40% by forming an anti-reflection film over the photodiode and reducing the thickness of the p/sup +/-layer formed at the photodiode surface. The VOD shutter voltage was reduced from 31 to 18 V by using an epitaxially grown substrate with double impurity concentration layers.
ISSN:0018-9383
1557-9646
DOI:10.1109/16.853032