A simple embedded DRAM process for 0.16-/spl mu/m CMOS technologies

A simple embedded DRAM process for 0.16-/spl mu/m CMOS technologies

A simple embedded DRAM (eDRAM) process that minimizes the front-end add-on cost is presented for 0.16-/spl mu/m CMOS technologies. The structure results in a low-leakage device (

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Bibliographische Detailangaben
Hauptverfasser: Liu, C.T., Diodato, P.W., Rogers, S., Lai, W.Y.C., Chen, C.J., Lloyd, E.J., Sun, C.Y., Barr, D., Liu, R., Chang, C.P., Trimble, L., Pai, C.S., Vaidya, H.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
CMOS process
CMOS technology
Costs
FETs
Furnaces
Logic devices
MIM capacitors
Plugs
Random access memory
Surfaces
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Beschreibung
Zusammenfassung:A simple embedded DRAM (eDRAM) process that minimizes the front-end add-on cost is presented for 0.16-/spl mu/m CMOS technologies. The structure results in a low-leakage device (
DOI:10.1109/VLSIT.2000.852769