Effect of Interface Layer Engineering on Resistive Switching Characteristics of ZrO2-Based Resistive Switching Devices
An intentionally introduced interface layer in the resistive random-access memory (RRAM) devices play an important role in the improvement of resistive switching characteristics. In this paper, the resistive switching characteristics of ZrO 2 -based RRAM devices by inserting a thin TiO 2 interface l...
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| Veröffentlicht in: | IEEE transactions on electron devices 2018-12, Vol.65 (12), p.5390-5394 |
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| container_issue | 12 |
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| container_title | IEEE transactions on electron devices |
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| creator | Li, Yingtao Li, Xiaoyan Fu, Liping Chen, Rongbo Wang, Hong Gao, Xiaoping |
| description | An intentionally introduced interface layer in the resistive random-access memory (RRAM) devices play an important role in the improvement of resistive switching characteristics. In this paper, the resistive switching characteristics of ZrO 2 -based RRAM devices by inserting a thin TiO 2 interface layer between electrodes and ZrO 2 resistive switching layer were investigated. Compared with the Cu/ZrO 2 /Pt and Cu/ZrO 2 /TiO 2 /Pt devices, the Cu/TiO 2 /ZrO 2 /Pt and Cu/TiO 2 /ZrO 2 /TiO 2 /Pt devices showed much improved programing voltages, including lower forming voltage and lower set voltage. Moreover, the reset current was also improved. These results indicate that the TiO 2 interface layer between the anode electrode and the resistive switching layer plays an important role in improving device performance. |
| doi_str_mv | 10.1109/TED.2018.2876942 |
| format | Article |
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In this paper, the resistive switching characteristics of ZrO 2 -based RRAM devices by inserting a thin TiO 2 interface layer between electrodes and ZrO 2 resistive switching layer were investigated. Compared with the Cu/ZrO 2 /Pt and Cu/ZrO 2 /TiO 2 /Pt devices, the Cu/TiO 2 /ZrO 2 /Pt and Cu/TiO 2 /ZrO 2 /TiO 2 /Pt devices showed much improved programing voltages, including lower forming voltage and lower set voltage. Moreover, the reset current was also improved. These results indicate that the TiO 2 interface layer between the anode electrode and the resistive switching layer plays an important role in improving device performance.</description><identifier>ISSN: 0018-9383</identifier><identifier>EISSN: 1557-9646</identifier><identifier>DOI: 10.1109/TED.2018.2876942</identifier><identifier>CODEN: IETDAI</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Anodes ; Bottlenecks ; Cathodes ; Electric potential ; Electrodes ; Interface layer ; Memory devices ; multilayer ; Nonhomogeneous media ; Object linking & embedding ; Performance evaluation ; Random access memory ; Resistance ; resistive random-access memory (RRAM) ; resistive switching ; Switching ; Titanium dioxide ; Zirconium dioxide</subject><ispartof>IEEE transactions on electron devices, 2018-12, Vol.65 (12), p.5390-5394</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2018</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><orcidid>0000-0002-0213-3523 ; 0000-0002-6898-9930</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/8520875$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,796,27924,27925,54758</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/8520875$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Li, Yingtao</creatorcontrib><creatorcontrib>Li, Xiaoyan</creatorcontrib><creatorcontrib>Fu, Liping</creatorcontrib><creatorcontrib>Chen, Rongbo</creatorcontrib><creatorcontrib>Wang, Hong</creatorcontrib><creatorcontrib>Gao, Xiaoping</creatorcontrib><title>Effect of Interface Layer Engineering on Resistive Switching Characteristics of ZrO2-Based Resistive Switching Devices</title><title>IEEE transactions on electron devices</title><addtitle>TED</addtitle><description>An intentionally introduced interface layer in the resistive random-access memory (RRAM) devices play an important role in the improvement of resistive switching characteristics. In this paper, the resistive switching characteristics of ZrO 2 -based RRAM devices by inserting a thin TiO 2 interface layer between electrodes and ZrO 2 resistive switching layer were investigated. Compared with the Cu/ZrO 2 /Pt and Cu/ZrO 2 /TiO 2 /Pt devices, the Cu/TiO 2 /ZrO 2 /Pt and Cu/TiO 2 /ZrO 2 /TiO 2 /Pt devices showed much improved programing voltages, including lower forming voltage and lower set voltage. Moreover, the reset current was also improved. These results indicate that the TiO 2 interface layer between the anode electrode and the resistive switching layer plays an important role in improving device performance.</description><subject>Anodes</subject><subject>Bottlenecks</subject><subject>Cathodes</subject><subject>Electric potential</subject><subject>Electrodes</subject><subject>Interface layer</subject><subject>Memory devices</subject><subject>multilayer</subject><subject>Nonhomogeneous media</subject><subject>Object linking & embedding</subject><subject>Performance evaluation</subject><subject>Random access memory</subject><subject>Resistance</subject><subject>resistive random-access memory (RRAM)</subject><subject>resistive switching</subject><subject>Switching</subject><subject>Titanium dioxide</subject><subject>Zirconium dioxide</subject><issn>0018-9383</issn><issn>1557-9646</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2018</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNptjc1Lw0AUxBdRsFbvgpcFz4n7nc1R26iFQkHrxUvYbN62WzSpu2lL_3sT6tHT8GZ-Mw-hW0pSSkn-sCymKSNUp0xnKhfsDI2olFmSK6HO0Yj0UZJzzS_RVYyb_lRCsBHaF86B7XDr8KzpIDhjAc_NEQIumpVvAIJvVrht8BtEHzu_B_x-8J1dD_ZkbYKxfW1IbBxWPsOCJU8mQv1vYwp7byFeowtnviLc_OkYfTwXy8lrMl-8zCaP88QzwrtEGEk1oUxUlZaaOclraSvqLCeVqLIsJzkwUwlFtZXCMaOgdspxaqFWpsfG6P60uw3tzw5iV27aXWj6lyWjPJNSaMV76u5EeQAot8F_m3AstWREZ5L_AlpaaD8</recordid><startdate>20181201</startdate><enddate>20181201</enddate><creator>Li, Yingtao</creator><creator>Li, Xiaoyan</creator><creator>Fu, Liping</creator><creator>Chen, Rongbo</creator><creator>Wang, Hong</creator><creator>Gao, Xiaoping</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0002-0213-3523</orcidid><orcidid>https://orcid.org/0000-0002-6898-9930</orcidid></search><sort><creationdate>20181201</creationdate><title>Effect of Interface Layer Engineering on Resistive Switching Characteristics of ZrO2-Based Resistive Switching Devices</title><author>Li, Yingtao ; Li, Xiaoyan ; Fu, Liping ; Chen, Rongbo ; Wang, Hong ; Gao, Xiaoping</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i203t-4a5180124bb8582f53d5cb1fc30b4b77909e2ab4618c54f2a6edf6f31ced6afc3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2018</creationdate><topic>Anodes</topic><topic>Bottlenecks</topic><topic>Cathodes</topic><topic>Electric potential</topic><topic>Electrodes</topic><topic>Interface layer</topic><topic>Memory devices</topic><topic>multilayer</topic><topic>Nonhomogeneous media</topic><topic>Object linking & embedding</topic><topic>Performance evaluation</topic><topic>Random access memory</topic><topic>Resistance</topic><topic>resistive random-access memory (RRAM)</topic><topic>resistive switching</topic><topic>Switching</topic><topic>Titanium dioxide</topic><topic>Zirconium dioxide</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Li, Yingtao</creatorcontrib><creatorcontrib>Li, Xiaoyan</creatorcontrib><creatorcontrib>Fu, Liping</creatorcontrib><creatorcontrib>Chen, Rongbo</creatorcontrib><creatorcontrib>Wang, Hong</creatorcontrib><creatorcontrib>Gao, Xiaoping</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE transactions on electron devices</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Li, Yingtao</au><au>Li, Xiaoyan</au><au>Fu, Liping</au><au>Chen, Rongbo</au><au>Wang, Hong</au><au>Gao, Xiaoping</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Effect of Interface Layer Engineering on Resistive Switching Characteristics of ZrO2-Based Resistive Switching Devices</atitle><jtitle>IEEE transactions on electron devices</jtitle><stitle>TED</stitle><date>2018-12-01</date><risdate>2018</risdate><volume>65</volume><issue>12</issue><spage>5390</spage><epage>5394</epage><pages>5390-5394</pages><issn>0018-9383</issn><eissn>1557-9646</eissn><coden>IETDAI</coden><abstract>An intentionally introduced interface layer in the resistive random-access memory (RRAM) devices play an important role in the improvement of resistive switching characteristics. In this paper, the resistive switching characteristics of ZrO 2 -based RRAM devices by inserting a thin TiO 2 interface layer between electrodes and ZrO 2 resistive switching layer were investigated. Compared with the Cu/ZrO 2 /Pt and Cu/ZrO 2 /TiO 2 /Pt devices, the Cu/TiO 2 /ZrO 2 /Pt and Cu/TiO 2 /ZrO 2 /TiO 2 /Pt devices showed much improved programing voltages, including lower forming voltage and lower set voltage. Moreover, the reset current was also improved. These results indicate that the TiO 2 interface layer between the anode electrode and the resistive switching layer plays an important role in improving device performance.</abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/TED.2018.2876942</doi><tpages>5</tpages><orcidid>https://orcid.org/0000-0002-0213-3523</orcidid><orcidid>https://orcid.org/0000-0002-6898-9930</orcidid></addata></record> |
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| source | IEEE Electronic Library (IEL) |
| subjects | Anodes Bottlenecks Cathodes Electric potential Electrodes Interface layer Memory devices multilayer Nonhomogeneous media Object linking & embedding Performance evaluation Random access memory Resistance resistive random-access memory (RRAM) resistive switching Switching Titanium dioxide Zirconium dioxide |
| title | Effect of Interface Layer Engineering on Resistive Switching Characteristics of ZrO2-Based Resistive Switching Devices |
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