Effect of Interface Layer Engineering on Resistive Switching Characteristics of ZrO2-Based Resistive Switching Devices

An intentionally introduced interface layer in the resistive random-access memory (RRAM) devices play an important role in the improvement of resistive switching characteristics. In this paper, the resistive switching characteristics of ZrO 2 -based RRAM devices by inserting a thin TiO 2 interface layer between electrodes and ZrO 2 resistive switching layer were investigated. Compared with the Cu/ZrO 2 /Pt and Cu/ZrO 2 /TiO 2 /Pt devices, the Cu/TiO 2 /ZrO 2 /Pt and Cu/TiO 2 /ZrO 2 /TiO 2 /Pt devices showed much improved programing voltages, including lower forming voltage and lower set voltage. Moreover, the reset current was also improved. These results indicate that the TiO 2 interface layer between the anode electrode and the resistive switching layer plays an important role in improving device performance.