TlInGaAs/InP DH structures with very small temperature-dependent bandgap energy

TlInGaAs/InP DH structures with very small temperature-dependent bandgap energy

TlInGaAsl/InP DH structures are grown on [100] InP substrates by gas source MBE. PL intensity for the DH structure is 10 times stronger than that of SH structure. Temperature variation of the PL peak energy is decreased with increasing Tl composition. The DH structure with Tl composition of 13% show...

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Hauptverfasser: Asahi, H., Ayabe, A., Lee, H.J., Maeda, O., Konishi, K., Asami, K., Gonda, S.
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Sprache:eng
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Ash
DH-HEMTs
Diode lasers
Indium gallium arsenide
Indium phosphide
Photonic band gap
Substrates
Temperature
Wavelength division multiplexing
X-ray diffraction
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Ayabe, A.
Lee, H.J.
Maeda, O.
Konishi, K.
Asami, K.
Gonda, S.
description TlInGaAsl/InP DH structures are grown on [100] InP substrates by gas source MBE. PL intensity for the DH structure is 10 times stronger than that of SH structure. Temperature variation of the PL peak energy is decreased with increasing Tl composition. The DH structure with Tl composition of 13% shows very small temperature variation of 0.03 meV/K. This value corresponds to the wavelength variation of 0.04 nm/K and is much smaller than the temperature variation of 0.1 nm/K for the lasing wavelength of InGaAsP/InP DFB laser diodes.
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fullrecord <record><control><sourceid>ieee_6IE</sourceid><recordid>TN_cdi_ieee_primary_850358</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>850358</ieee_id><sourcerecordid>850358</sourcerecordid><originalsourceid>FETCH-LOGICAL-i172t-792456384cc52f9fc2367694954fa9744f31f04900f67a4088bb3d18dceef77e3</originalsourceid><addsrcrecordid>eNotj81qwkAURgfaQtX2BVzNCyTezP8sxbYasCjFrmWS3LEpSQgzsSVvX8WuzuI7fHAImWeQZhnYRb7K9x_vKQOA1Ejg0tyRKWgDXHEG8p5MLhZLjFL2kUxj_L6IUjMzIbtDk3drt4yLvNvTlw2NQziXwzlgpL_18EV_MIw0tq5p6IBtj8Fdx6TCHrsKu4EWrqtOrqfYYTiNT-TBuybi8z9n5PPt9bDaJNvdOl8tt0mdaTYk2jIhFTeiLCXz1peMK62ssFJ4Z7UQnmcehAXwSjsBxhQFrzJTlYhea-QzMr_91oh47EPdujAeb-38DyS5TfU</addsrcrecordid><sourcetype>Publisher</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype></control><display><type>conference_proceeding</type><title>TlInGaAs/InP DH structures with very small temperature-dependent bandgap energy</title><source>IEEE Electronic Library (IEL) Conference Proceedings</source><creator>Asahi, H. ; Ayabe, A. ; Lee, H.J. ; Maeda, O. ; Konishi, K. ; Asami, K. ; Gonda, S.</creator><creatorcontrib>Asahi, H. ; Ayabe, A. ; Lee, H.J. ; Maeda, O. ; Konishi, K. ; Asami, K. ; Gonda, S.</creatorcontrib><description>TlInGaAsl/InP DH structures are grown on [100] InP substrates by gas source MBE. PL intensity for the DH structure is 10 times stronger than that of SH structure. Temperature variation of the PL peak energy is decreased with increasing Tl composition. The DH structure with Tl composition of 13% shows very small temperature variation of 0.03 meV/K. This value corresponds to the wavelength variation of 0.04 nm/K and is much smaller than the temperature variation of 0.1 nm/K for the lasing wavelength of InGaAsP/InP DFB laser diodes.</description><identifier>ISSN: 1092-8669</identifier><identifier>ISBN: 0780363205</identifier><identifier>ISBN: 9780780363205</identifier><identifier>DOI: 10.1109/ICIPRM.2000.850358</identifier><language>eng</language><publisher>IEEE</publisher><subject>Ash ; DH-HEMTs ; Diode lasers ; Indium gallium arsenide ; Indium phosphide ; Photonic band gap ; Substrates ; Temperature ; Wavelength division multiplexing ; X-ray diffraction</subject><ispartof>Conference Proceedings. 2000 International Conference on Indium Phosphide and Related Materials (Cat. No.00CH37107), 2000, p.557-560</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/850358$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,776,780,785,786,2052,4036,4037,27904,54898</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/850358$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Asahi, H.</creatorcontrib><creatorcontrib>Ayabe, A.</creatorcontrib><creatorcontrib>Lee, H.J.</creatorcontrib><creatorcontrib>Maeda, O.</creatorcontrib><creatorcontrib>Konishi, K.</creatorcontrib><creatorcontrib>Asami, K.</creatorcontrib><creatorcontrib>Gonda, S.</creatorcontrib><title>TlInGaAs/InP DH structures with very small temperature-dependent bandgap energy</title><title>Conference Proceedings. 2000 International Conference on Indium Phosphide and Related Materials (Cat. No.00CH37107)</title><addtitle>ICIPRM</addtitle><description>TlInGaAsl/InP DH structures are grown on [100] InP substrates by gas source MBE. PL intensity for the DH structure is 10 times stronger than that of SH structure. Temperature variation of the PL peak energy is decreased with increasing Tl composition. The DH structure with Tl composition of 13% shows very small temperature variation of 0.03 meV/K. This value corresponds to the wavelength variation of 0.04 nm/K and is much smaller than the temperature variation of 0.1 nm/K for the lasing wavelength of InGaAsP/InP DFB laser diodes.</description><subject>Ash</subject><subject>DH-HEMTs</subject><subject>Diode lasers</subject><subject>Indium gallium arsenide</subject><subject>Indium phosphide</subject><subject>Photonic band gap</subject><subject>Substrates</subject><subject>Temperature</subject><subject>Wavelength division multiplexing</subject><subject>X-ray diffraction</subject><issn>1092-8669</issn><isbn>0780363205</isbn><isbn>9780780363205</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2000</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNotj81qwkAURgfaQtX2BVzNCyTezP8sxbYasCjFrmWS3LEpSQgzsSVvX8WuzuI7fHAImWeQZhnYRb7K9x_vKQOA1Ejg0tyRKWgDXHEG8p5MLhZLjFL2kUxj_L6IUjMzIbtDk3drt4yLvNvTlw2NQziXwzlgpL_18EV_MIw0tq5p6IBtj8Fdx6TCHrsKu4EWrqtOrqfYYTiNT-TBuybi8z9n5PPt9bDaJNvdOl8tt0mdaTYk2jIhFTeiLCXz1peMK62ssFJ4Z7UQnmcehAXwSjsBxhQFrzJTlYhea-QzMr_91oh47EPdujAeb-38DyS5TfU</recordid><startdate>2000</startdate><enddate>2000</enddate><creator>Asahi, H.</creator><creator>Ayabe, A.</creator><creator>Lee, H.J.</creator><creator>Maeda, O.</creator><creator>Konishi, K.</creator><creator>Asami, K.</creator><creator>Gonda, S.</creator><general>IEEE</general><scope>6IE</scope><scope>6IH</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIO</scope></search><sort><creationdate>2000</creationdate><title>TlInGaAs/InP DH structures with very small temperature-dependent bandgap energy</title><author>Asahi, H. ; Ayabe, A. ; Lee, H.J. ; Maeda, O. ; Konishi, K. ; Asami, K. ; Gonda, S.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i172t-792456384cc52f9fc2367694954fa9744f31f04900f67a4088bb3d18dceef77e3</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2000</creationdate><topic>Ash</topic><topic>DH-HEMTs</topic><topic>Diode lasers</topic><topic>Indium gallium arsenide</topic><topic>Indium phosphide</topic><topic>Photonic band gap</topic><topic>Substrates</topic><topic>Temperature</topic><topic>Wavelength division multiplexing</topic><topic>X-ray diffraction</topic><toplevel>online_resources</toplevel><creatorcontrib>Asahi, H.</creatorcontrib><creatorcontrib>Ayabe, A.</creatorcontrib><creatorcontrib>Lee, H.J.</creatorcontrib><creatorcontrib>Maeda, O.</creatorcontrib><creatorcontrib>Konishi, K.</creatorcontrib><creatorcontrib>Asami, K.</creatorcontrib><creatorcontrib>Gonda, S.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan (POP) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP) 1998-present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Asahi, H.</au><au>Ayabe, A.</au><au>Lee, H.J.</au><au>Maeda, O.</au><au>Konishi, K.</au><au>Asami, K.</au><au>Gonda, S.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>TlInGaAs/InP DH structures with very small temperature-dependent bandgap energy</atitle><btitle>Conference Proceedings. 2000 International Conference on Indium Phosphide and Related Materials (Cat. No.00CH37107)</btitle><stitle>ICIPRM</stitle><date>2000</date><risdate>2000</risdate><spage>557</spage><epage>560</epage><pages>557-560</pages><issn>1092-8669</issn><isbn>0780363205</isbn><isbn>9780780363205</isbn><abstract>TlInGaAsl/InP DH structures are grown on [100] InP substrates by gas source MBE. PL intensity for the DH structure is 10 times stronger than that of SH structure. Temperature variation of the PL peak energy is decreased with increasing Tl composition. The DH structure with Tl composition of 13% shows very small temperature variation of 0.03 meV/K. This value corresponds to the wavelength variation of 0.04 nm/K and is much smaller than the temperature variation of 0.1 nm/K for the lasing wavelength of InGaAsP/InP DFB laser diodes.</abstract><pub>IEEE</pub><doi>10.1109/ICIPRM.2000.850358</doi><tpages>4</tpages></addata></record>
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subjects Ash
DH-HEMTs
Diode lasers
Indium gallium arsenide
Indium phosphide
Photonic band gap
Substrates
Temperature
Wavelength division multiplexing
X-ray diffraction
title TlInGaAs/InP DH structures with very small temperature-dependent bandgap energy
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-27T16%3A01%3A35IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-ieee_6IE&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=proceeding&rft.atitle=TlInGaAs/InP%20DH%20structures%20with%20very%20small%20temperature-dependent%20bandgap%20energy&rft.btitle=Conference%20Proceedings.%202000%20International%20Conference%20on%20Indium%20Phosphide%20and%20Related%20Materials%20(Cat.%20No.00CH37107)&rft.au=Asahi,%20H.&rft.date=2000&rft.spage=557&rft.epage=560&rft.pages=557-560&rft.issn=1092-8669&rft.isbn=0780363205&rft.isbn_list=9780780363205&rft_id=info:doi/10.1109/ICIPRM.2000.850358&rft_dat=%3Cieee_6IE%3E850358%3C/ieee_6IE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rft_ieee_id=850358&rfr_iscdi=true