TlInGaAs/InP DH structures with very small temperature-dependent bandgap energy

TlInGaAs/InP DH structures with very small temperature-dependent bandgap energy

TlInGaAsl/InP DH structures are grown on [100] InP substrates by gas source MBE. PL intensity for the DH structure is 10 times stronger than that of SH structure. Temperature variation of the PL peak energy is decreased with increasing Tl composition. The DH structure with Tl composition of 13% show...

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Bibliographische Detailangaben
Hauptverfasser: Asahi, H., Ayabe, A., Lee, H.J., Maeda, O., Konishi, K., Asami, K., Gonda, S.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Ash
DH-HEMTs
Diode lasers
Indium gallium arsenide
Indium phosphide
Photonic band gap
Substrates
Temperature
Wavelength division multiplexing
X-ray diffraction
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Zusammenfassung:TlInGaAsl/InP DH structures are grown on [100] InP substrates by gas source MBE. PL intensity for the DH structure is 10 times stronger than that of SH structure. Temperature variation of the PL peak energy is decreased with increasing Tl composition. The DH structure with Tl composition of 13% shows very small temperature variation of 0.03 meV/K. This value corresponds to the wavelength variation of 0.04 nm/K and is much smaller than the temperature variation of 0.1 nm/K for the lasing wavelength of InGaAsP/InP DFB laser diodes.
ISSN:1092-8669
DOI:10.1109/ICIPRM.2000.850358