Dynamic scaling of plasma etched InP surface

Dynamic scaling of plasma etched InP surface

Dynamical microroughening of the etch front of InP[100] due to Electron Cyclotron Resonance plasma etching was investigated. A quantitative study of the etch front morphology shows that the scaling law holds and the observed structure is self-affine. The low value of the growth exponent (/spl beta/=...

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Hauptverfasser: Silova, M., Bruls, D.M., Silov, A.Yu, Roy, B.H.V., Smalbrugge, E., Karouta, F., Koenraad, P.M., Wolter, J.H.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Atomic force microscopy
Cyclotrons
Dry etching
Electrons
Indium phosphide
Plasma applications
Plasma devices
Rough surfaces
Surface morphology
Surface roughness
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Zusammenfassung:Dynamical microroughening of the etch front of InP[100] due to Electron Cyclotron Resonance plasma etching was investigated. A quantitative study of the etch front morphology shows that the scaling law holds and the observed structure is self-affine. The low value of the growth exponent (/spl beta/=0.37) indicates that neither plasma reemission nor geometrical shadowing controls the Electron Cyclotron Resonance etching of InP.
ISSN:1092-8669
DOI:10.1109/ICIPRM.2000.850267