InGaAs Junctionless FinFETs With Self-Aligned Ni-InGaAs S/D

In this paper, the InGaAs junctionless (JL) FinFET with notable electrical performance is demonstrated. The device with W_{\mathrm{ fin}} down to 20 nm, EOT of 2.1 nm, and L_{G} = 60 nm shows high I_{\mathrm{ ON}} = 188~\mu \text{A}/\mu \text{m} at V_{DD} = 0.5 V and I_{\mathrm{ OFF}} = 100 nA/ \mu \text{m} , I_{\mathrm{ ON}}/I_{\mathrm{ OFF}} = 5 \times 10^{5} , DIBL = 106 mV/V and SS = 96 mV/dec. The device also exhibits a decent extrinsic transconductance ( G_{\mathrm{ m}} ) of 1142 \mu \text{S}/\mu \text{m} at V_{\mathrm{ DS}} of 0.5 V. This high performance is attributed to the moderate doping concentration to ensure the channel carriers could be effectively depleted and the low R_{\mathrm{ SD}} realized by self-aligned Ni-InGaAs alloy S/D. Furthermore, we also examine the temperature dependence of the main electrical parameters of the JL transistor.