Characterization of the MIC/MILC interface and its effects on the performance of MILC thin-film transistors
Process and material characterization of the crystallization of amorphous silicon by metal-induced crystallization (MIC) and metal-induced lateral crystallization (MILC) using evaporated Ni has been performed. An activation energy of about 2 eV has been obtained for the MILC rate. The Ni content in...
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Veröffentlicht in: | IEEE transactions on electron devices 2000-05, Vol.47 (5), p.1061-1067 |
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Sprache: | eng |
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