Characterization of the MIC/MILC interface and its effects on the performance of MILC thin-film transistors

Process and material characterization of the crystallization of amorphous silicon by metal-induced crystallization (MIC) and metal-induced lateral crystallization (MILC) using evaporated Ni has been performed. An activation energy of about 2 eV has been obtained for the MILC rate. The Ni content in...

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Veröffentlicht in:IEEE transactions on electron devices 2000-05, Vol.47 (5), p.1061-1067
Hauptverfasser: Man Wong, Zhonghe Jin, Bhat, G.A., Wong, P.C., Hoi Sing Kwok
Format: Artikel
Sprache:eng
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Zusammenfassung:Process and material characterization of the crystallization of amorphous silicon by metal-induced crystallization (MIC) and metal-induced lateral crystallization (MILC) using evaporated Ni has been performed. An activation energy of about 2 eV has been obtained for the MILC rate. The Ni content in the MILC area is about 0.02 atomic %, significantly higher than the solid solubility limit of Ni in crystalline Si at the crystallization temperature of 500/spl deg/C. A prominent Ni peak has been detected at the MILC front using scanning secondary ion mass spectrometry. The MIC/MILC interface has been determined to be highly defective, comprising a continuous grain boundary with high Ni concentration. The effects of the relative locations of this interface and the metallurgical junctions on TFT performance have been studied.
ISSN:0018-9383
1557-9646
DOI:10.1109/16.841241