Photonic Integration With Epitaxial III-V on Silicon

Photonic Integration With Epitaxial III-V on Silicon

We present a brief overview of the various leading platforms for photonic integration. Subsequently, we consider the possibility of a photonic integrated circuit platform utilizing epitaxially grown III-V material on silicon-without the need for wafer bonding, or an externally coupled laser. Finally...

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Veröffentlicht in:IEEE journal of selected topics in quantum electronics 2018-11, Vol.24 (6), p.1-12
Hauptverfasser: Liu, Alan Y., Bowers, John
Format: Artikel
Sprache:eng
Schlagworte:
Economic analysis
Epitaxial growth
III-V semiconductor materials
Indium phosphide
Integrated circuits
Integrated optoelectronics
Phase modulation
Photonics
Platforms
quantum dots
Silicon
wafer scale integration
Waveguide lasers
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Beschreibung
Zusammenfassung:We present a brief overview of the various leading platforms for photonic integration. Subsequently, we consider the possibility of a photonic integrated circuit platform utilizing epitaxially grown III-V material on silicon-without the need for wafer bonding, or an externally coupled laser. Finally, a techno-economic analysis contrasting the aforementioned platforms will be presented.
ISSN:1077-260X
1558-4542
DOI:10.1109/JSTQE.2018.2854542