Investigation of ion-beam modified silicon by photoacoustic method

Thermal, elastic and electronic transport properties of ion-modified silicon samples were investigated by a photoacoustic frequency transmission technique. The experimental photoacoustic data vs the modulating frequency were measured and analyzed. The experimental results show a clear influence of t...

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Hauptverfasser:	Todorovic, D.M., Nikolic, P.M., Elazar, J., Smiljanic, M., Bojicic, A.I., Vasiljevic-Radovic, D.G., Radulovic, K.T.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Frequency Ion implantation Microphones Plasma devices Plasma immersion ion implantation Plasma materials processing Plasma waves Semiconductor materials Silicon Thermoelasticity
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Beschreibung
Zusammenfassung:	Thermal, elastic and electronic transport properties of ion-modified silicon samples were investigated by a photoacoustic frequency transmission technique. The experimental photoacoustic data vs the modulating frequency were measured and analyzed. The experimental results show a clear influence of the process of ion-modification on the photoacoustic signal. The thermal, elastic and electronic transport parameters of ion-modified semiconductors were obtained by comparing the experimental and calculated theoretical photoacoustic signal which provide an indicator of the degree of modification.
DOI:	10.1109/ICMEL.2000.840566