Toward Temperature Tracking With Unipolar Metal-Oxide Thin-Film SAR C-2C ADC on Plastic

The maturity of metal-oxide thin-film transistors (TFT) highlights opportunities to develop robust and low-cost electronics on flexible and stretchable substrates over large area in an industry-compatible technology. Internet-of-Everything applications with sensor nodes are driving the development o...

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Veröffentlicht in:IEEE journal of solid-state circuits 2018-08, Vol.53 (8), p.2263-2272
Hauptverfasser: Papadopoulos, Nikolas P., De Roose, Florian, van der Steen, Jan-Laurens P. J., Smits, Edsger C. P., Ameys, Marc, Dehaene, Wim, Genoe, Jan, Myny, Kris
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Sprache:eng
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Zusammenfassung:The maturity of metal-oxide thin-film transistors (TFT) highlights opportunities to develop robust and low-cost electronics on flexible and stretchable substrates over large area in an industry-compatible technology. Internet-of-Everything applications with sensor nodes are driving the development of analog-to-digital converters (ADCs). In this paper, a self-biased and self-digital-controlled successive approximation ADC with integrated references and sensor read-in circuitry together with a printed negative temperature coefficient (NTC) sensor using unipolar dual-gate metal-oxide (InGaZnO) TFTs is demonstrated. The system is operated at a clock of up to 400 Hz and a total power dissipation of 245 mW (73 \mu \text{W} from analog) at a maximum power supply of 30 V is measured. The radio-frequency identification-ready ADC comprises of a total of 1394 indium-gallium-zinc oxide TFTs and 31 metal-insulator-metal capacitors. A figure of merit of 26 nJ/c.s. is achieved from the ADC driven from external microcontroller. The robustness of the various blocks of the chip is characterized and the yield is discussed.
ISSN:0018-9200
1558-173X
DOI:10.1109/JSSC.2018.2831211