Enhanced Sheet Charge Density in DIBS Grown CdO Alloyed ZnO Buffer Based Heterostructure

In this letter, we report on achieving significantly high (~ 6{\times} ) sheet charge density (n s ) in MgZnO/CdZnO heterostructure, as compared with that in MgZnO/ZnO, at lower Mg ( {\le} 0.15 ) compositions in barrier MgZnO layer, with both heterostructures grown by dual ion beam sputtering techni...

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Veröffentlicht in:	IEEE electron device letters 2018-06, Vol.39 (6), p.827-830
Hauptverfasser:	Khan, Md Arif, Singh, Rohit, Bhardwaj, Ritesh, Kumar, Amitesh, Das, Amit Kumar, Misra, Pankaj, Kranti, Abhinav, Mukherjee, Shaibal
Format:	Artikel
Sprache:	eng
Schlagworte:	2-DEG Charge carrier density Density measurement dual ion beam sputtering (DIBS) II-VI semiconductor materials sheet charge density Temperature measurement Voltage measurement Zinc oxide ZnO heterostructure
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