1 mW CW RT 1.55 /spl mu/m tunnel VCSEL: thermal and electrical characteristics of GaAs/AlAs metamorphic mirrors
Summary form only given. Recently, high power monolithic VCSELs (1 mW at 1.55 um) have been demonstrated by using tunnel junction injection and a metamorphic AlAs/GaAs mirror. This approach combined with a planar process based on proton implantation might enable the ultra low cost fabrication of 1.5...
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| creator | Starck, C. Boucart, J. Plais, A. Bouche, N. Derouin, E. Pinquier, A. Gaborit, F. Bonnet-Gamard, J. Fortin, C. Goldstein, L. Brillouet, F. Salet, P. Carpentier, D. Martineau, M.-F. Jacquet, J. |
| description | Summary form only given. Recently, high power monolithic VCSELs (1 mW at 1.55 um) have been demonstrated by using tunnel junction injection and a metamorphic AlAs/GaAs mirror. This approach combined with a planar process based on proton implantation might enable the ultra low cost fabrication of 1.55 /spl mu/m laser sources. In the paper we present the optimization of the electrical conductivity of AlAs/GaAs n type metamorphic mirrors and analyze their thermal properties. |
| doi_str_mv | 10.1109/CLEO.1999.834437 |
| format | Conference Proceeding |
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In the paper we present the optimization of the electrical conductivity of AlAs/GaAs n type metamorphic mirrors and analyze their thermal properties.</description><subject>Doping</subject><subject>Electric resistance</subject><subject>Electric variables</subject><subject>Gallium arsenide</subject><subject>Mirrors</subject><subject>Protons</subject><subject>Temperature</subject><subject>Thermal conductivity</subject><subject>Thermal resistance</subject><subject>Vertical cavity surface emitting lasers</subject><isbn>9781557525956</isbn><isbn>1557525951</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>1999</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNp9jrFqwzAURQWhkNJ6D5neD9S2YimOshnjtkMg0IZkDEJ5wSqSbd5Thv59A-3cuxwOZ7lCLGSZS1maot11-1waY_JNpVRVz0Rm6o3UutYrbfR6LjLmr_I-paVaq0cxSognaE_wcQCZaw0FTwHirYiQbsOAAY7tZ7fbQuqRog1ghwtgQJfIu7u63pJ1Cclz8o5hvMKbbbhoQsMQMdk40tR7B9ETjcTP4uFqA2P2xyexfO0O7fuLR8TzRD5a-j7_vq_-jT_FxkdB</recordid><startdate>1999</startdate><enddate>1999</enddate><creator>Starck, C.</creator><creator>Boucart, J.</creator><creator>Plais, A.</creator><creator>Bouche, N.</creator><creator>Derouin, E.</creator><creator>Pinquier, A.</creator><creator>Gaborit, F.</creator><creator>Bonnet-Gamard, J.</creator><creator>Fortin, C.</creator><creator>Goldstein, L.</creator><creator>Brillouet, F.</creator><creator>Salet, P.</creator><creator>Carpentier, D.</creator><creator>Martineau, M.-F.</creator><creator>Jacquet, J.</creator><general>IEEE</general><scope>6IE</scope><scope>6IH</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIO</scope></search><sort><creationdate>1999</creationdate><title>1 mW CW RT 1.55 /spl mu/m tunnel VCSEL: thermal and electrical characteristics of GaAs/AlAs metamorphic mirrors</title><author>Starck, C. ; Boucart, J. ; Plais, A. ; Bouche, N. ; Derouin, E. ; Pinquier, A. ; Gaborit, F. ; Bonnet-Gamard, J. ; Fortin, C. ; Goldstein, L. ; Brillouet, F. ; Salet, P. ; Carpentier, D. ; Martineau, M.-F. ; Jacquet, J.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-ieee_primary_8344373</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>1999</creationdate><topic>Doping</topic><topic>Electric resistance</topic><topic>Electric variables</topic><topic>Gallium arsenide</topic><topic>Mirrors</topic><topic>Protons</topic><topic>Temperature</topic><topic>Thermal conductivity</topic><topic>Thermal resistance</topic><topic>Vertical cavity surface emitting lasers</topic><toplevel>online_resources</toplevel><creatorcontrib>Starck, C.</creatorcontrib><creatorcontrib>Boucart, J.</creatorcontrib><creatorcontrib>Plais, A.</creatorcontrib><creatorcontrib>Bouche, N.</creatorcontrib><creatorcontrib>Derouin, E.</creatorcontrib><creatorcontrib>Pinquier, A.</creatorcontrib><creatorcontrib>Gaborit, F.</creatorcontrib><creatorcontrib>Bonnet-Gamard, J.</creatorcontrib><creatorcontrib>Fortin, C.</creatorcontrib><creatorcontrib>Goldstein, L.</creatorcontrib><creatorcontrib>Brillouet, F.</creatorcontrib><creatorcontrib>Salet, P.</creatorcontrib><creatorcontrib>Carpentier, D.</creatorcontrib><creatorcontrib>Martineau, M.-F.</creatorcontrib><creatorcontrib>Jacquet, J.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan (POP) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP) 1998-present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Starck, C.</au><au>Boucart, J.</au><au>Plais, A.</au><au>Bouche, N.</au><au>Derouin, E.</au><au>Pinquier, A.</au><au>Gaborit, F.</au><au>Bonnet-Gamard, J.</au><au>Fortin, C.</au><au>Goldstein, L.</au><au>Brillouet, F.</au><au>Salet, P.</au><au>Carpentier, D.</au><au>Martineau, M.-F.</au><au>Jacquet, J.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>1 mW CW RT 1.55 /spl mu/m tunnel VCSEL: thermal and electrical characteristics of GaAs/AlAs metamorphic mirrors</atitle><btitle>Technical Digest. Summaries of papers presented at the Conference on Lasers and Electro-Optics. Postconference Edition. CLEO '99. Conference on Lasers and Electro-Optics (IEEE Cat. No.99CH37013)</btitle><stitle>CLEO</stitle><date>1999</date><risdate>1999</risdate><spage>454</spage><epage>455</epage><pages>454-455</pages><isbn>9781557525956</isbn><isbn>1557525951</isbn><abstract>Summary form only given. Recently, high power monolithic VCSELs (1 mW at 1.55 um) have been demonstrated by using tunnel junction injection and a metamorphic AlAs/GaAs mirror. This approach combined with a planar process based on proton implantation might enable the ultra low cost fabrication of 1.55 /spl mu/m laser sources. In the paper we present the optimization of the electrical conductivity of AlAs/GaAs n type metamorphic mirrors and analyze their thermal properties.</abstract><pub>IEEE</pub><doi>10.1109/CLEO.1999.834437</doi></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | ISBN: 9781557525956 |
| ispartof | Technical Digest. Summaries of papers presented at the Conference on Lasers and Electro-Optics. Postconference Edition. CLEO '99. Conference on Lasers and Electro-Optics (IEEE Cat. No.99CH37013), 1999, p.454-455 |
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| language | eng |
| recordid | cdi_ieee_primary_834437 |
| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Doping Electric resistance Electric variables Gallium arsenide Mirrors Protons Temperature Thermal conductivity Thermal resistance Vertical cavity surface emitting lasers |
| title | 1 mW CW RT 1.55 /spl mu/m tunnel VCSEL: thermal and electrical characteristics of GaAs/AlAs metamorphic mirrors |
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