1 mW CW RT 1.55 /spl mu/m tunnel VCSEL: thermal and electrical characteristics of GaAs/AlAs metamorphic mirrors

Summary form only given. Recently, high power monolithic VCSELs (1 mW at 1.55 um) have been demonstrated by using tunnel junction injection and a metamorphic AlAs/GaAs mirror. This approach combined with a planar process based on proton implantation might enable the ultra low cost fabrication of 1.5...

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Hauptverfasser:	Starck, C., Boucart, J., Plais, A., Bouche, N., Derouin, E., Pinquier, A., Gaborit, F., Bonnet-Gamard, J., Fortin, C., Goldstein, L., Brillouet, F., Salet, P., Carpentier, D., Martineau, M.-F., Jacquet, J.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Doping Electric resistance Electric variables Gallium arsenide Mirrors Protons Temperature Thermal conductivity Thermal resistance Vertical cavity surface emitting lasers
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Beschreibung
Zusammenfassung:	Summary form only given. Recently, high power monolithic VCSELs (1 mW at 1.55 um) have been demonstrated by using tunnel junction injection and a metamorphic AlAs/GaAs mirror. This approach combined with a planar process based on proton implantation might enable the ultra low cost fabrication of 1.55 /spl mu/m laser sources. In the paper we present the optimization of the electrical conductivity of AlAs/GaAs n type metamorphic mirrors and analyze their thermal properties.
DOI:	10.1109/CLEO.1999.834437