Second harmonic generation of a CO/sub 2/ laser using a thick quasi-phase-matched GaAs layer grown by hybride vapor phase epitaxy

Summary form only given. GaAs is a very interesting material for mid IR nonlinear frequency conversion. To obtain shorter periods several techniques are based on patterning a template substrate thanks to photolithography have been proposed. After having prepared the template a growth is made on it w...

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Bibliographische Detailangaben

Hauptverfasser:	Becouarn, L., Gerard, B., Brevignon, M., Lehoux, J., Gourdel, Y., Lallier, E.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Chemicals Epitaxial growth Etching Frequency conversion Gallium arsenide Laser beam cutting Laser theory Molecular beam epitaxial growth Substrates Thermal conductivity
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