Second harmonic generation of a CO/sub 2/ laser using a thick quasi-phase-matched GaAs layer grown by hybride vapor phase epitaxy

Summary form only given. GaAs is a very interesting material for mid IR nonlinear frequency conversion. To obtain shorter periods several techniques are based on patterning a template substrate thanks to photolithography have been proposed. After having prepared the template a growth is made on it with organometallic chemical vapor deposition (OMCVD) or molecular beam epitaxy (MBE). However these techniques have a low deposition rate and waveguide structures must be used. The purpose of this contribution is to study and to characterize the growth of a thick layer of GaAs on a pattern of antiphase domains (APDs) for future bulk quasi-phase matched nonlinear applications.