Lasing in free standing GaN hexagons

Lasing in free standing GaN hexagons

Summary form only given. We present analysis of the lasing characteristics of GaN hexagons fabricated by selective area growth hydride vapor phase epitaxy (SAG-HVPE). SAG-HVPE GaN hexagons are commercially important because of the low manufacturing cost and because they provide laser quality facets...

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Bibliographische Detailangaben
Hauptverfasser: Herzog, W.D., Goldberg, B.B., Unlu, M.S., Singh, R., Dabkowski, F.P.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Absorption
Doping
Electron optics
Gallium nitride
Optical pumping
Quantum well devices
Radiative recombination
Stimulated emission
Substrates
Temperature measurement
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Beschreibung
Zusammenfassung:Summary form only given. We present analysis of the lasing characteristics of GaN hexagons fabricated by selective area growth hydride vapor phase epitaxy (SAG-HVPE). SAG-HVPE GaN hexagons are commercially important because of the low manufacturing cost and because they provide laser quality facets without etching or cleaving. We demonstrate optically pumped lasing and observe longitudinal cavity modes.
DOI:10.1109/CLEO.1999.833937