Hybrid Integration of III–V Solar Microcells for High-Efficiency Concentrated Photovoltaic Modules

Hybrid Integration of III–V Solar Microcells for High-Efficiency Concentrated Photovoltaic Modules

The design, fabrication, and performance of InGaAs and InGaP/GaAs microcells are presented. These cells are integrated with a Si wafer providing a path for insertion in hybrid concentrated photovoltaic modules. Comparisons are made between bonded cells and cells fabricated on their native wafer. The...

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Veröffentlicht in:IEEE journal of selected topics in quantum electronics 2018-03, Vol.24 (2), p.1-9
Hauptverfasser: Tauke-Pedretti, Anna, Cederberg, Jeffrey G., Cruz-Campa, Jose L., Alford, Charles, Sanchez, Carlos A., Nielson, Gregory N., Okandan, Murat, Sweatt, William, Jared, Bradley H., Saavedra, Michael, Miller, William, Keeler, Gordon A., Paap, Scott, Mudrick, John, Lentine, Anthony, Resnick, Paul, Gupta, Vipin, Nelson, Jeffrey, Li, Lan, Li, Duanhui, Gu, Tian, Hu, Juejun
Format: Artikel
Sprache:eng
Schlagworte:
Epitaxial growth
Gallium arsenide
hybrid integration
III–V solar cells
Junctions
Microcell networks
Multijunction solar cells
Photovoltaic cells
Resistance
Silicon
SOLAR ENERGY
wafer bonding
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Zusammenfassung:The design, fabrication, and performance of InGaAs and InGaP/GaAs microcells are presented. These cells are integrated with a Si wafer providing a path for insertion in hybrid concentrated photovoltaic modules. Comparisons are made between bonded cells and cells fabricated on their native wafer. The bonded cells showed no evidence of degradation in spite of the integration process that involved significant processing including the removal of the III-V substrate.
ISSN:1077-260X
1558-4542
DOI:10.1109/JSTQE.2018.2812218