Microwave Characterization of Ba-Substituted PZT and ZnO Thin Films

Microwave Characterization of Ba-Substituted PZT and ZnO Thin Films

The microwave dielectric properties of (Ba 0.1 Pb 0.9 )(Zr 0.52 Ti 0.48 )O 3 (BPZT) and ZnO thin films with thicknesses below 2 μm were investigated. No significant dielectric relaxation was observed for both BPZT and ZnO up to 30 GHz. The intrinsic dielectric constant of BPZT was as high as 980 at...

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Veröffentlicht in:IEEE transactions on ultrasonics, ferroelectrics, and frequency control ferroelectrics, and frequency control, 2018-05, Vol.65 (5), p.881-888
Hauptverfasser: Tierno, Davide, Dekkers, Matthijn, Wittendorp, Paul, Xiao Sun, Bayer, Samuel C., King, Seth T., Van Elshocht, Sven, Heyns, Marc, Radu, Iuliana P., Adelmann, Christoph
Format: Artikel
Sprache:eng
Schlagworte:
Capacitors
Dielectric properties
Dielectric relaxation
Dielectric strength
Electrodes
ferroelectric films
II-VI semiconductor materials
Permittivity
piezoelectric materials
Thin films
Zinc oxide
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Zusammenfassung:The microwave dielectric properties of (Ba 0.1 Pb 0.9 )(Zr 0.52 Ti 0.48 )O 3 (BPZT) and ZnO thin films with thicknesses below 2 μm were investigated. No significant dielectric relaxation was observed for both BPZT and ZnO up to 30 GHz. The intrinsic dielectric constant of BPZT was as high as 980 at 30 GHz. The absence of strong dielectric dispersion and loss peaks in the studied frequency range can be linked to the small grain diameters in these ultrathin films.
ISSN:0885-3010
1525-8955
DOI:10.1109/TUFFC.2018.2812424