The effect of thermal annealing on the properties of polysilicon piezoresistors
Polycrystalline silicon offers promise as a pressure sensor material, especially for extended temperature range applications. The investigation of the dependencies of polysilicon layers' physical properties on deposition and annealing parameters is the aim of this work.
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| creator | Gridchin, V.A. Grischenko, V.V. Loganihin, A.M. Lubimsky, V.M. |
| description | Polycrystalline silicon offers promise as a pressure sensor material, especially for extended temperature range applications. The investigation of the dependencies of polysilicon layers' physical properties on deposition and annealing parameters is the aim of this work. |
| doi_str_mv | 10.1109/MIAME.1999.827838 |
| format | Conference Proceeding |
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| identifier | ISBN: 9785778202702 |
| ispartof | Proceedings of the IEEE - Russia Conference. 1999 High Power Microwave Electronics: Measurements, Identification, Applications. MIA-ME'99 (Cat. No.99EX289), 1999, p.III9-II13 |
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| language | eng |
| recordid | cdi_ieee_primary_827838 |
| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Annealing Argon Conductivity Doping Ion implantation Piezoresistive devices Silicon Stability Temperature dependence Virtual reality |
| title | The effect of thermal annealing on the properties of polysilicon piezoresistors |
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