The effect of thermal annealing on the properties of polysilicon piezoresistors

The effect of thermal annealing on the properties of polysilicon piezoresistors

Polycrystalline silicon offers promise as a pressure sensor material, especially for extended temperature range applications. The investigation of the dependencies of polysilicon layers' physical properties on deposition and annealing parameters is the aim of this work.

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Bibliographische Detailangaben
Hauptverfasser: Gridchin, V.A., Grischenko, V.V., Loganihin, A.M., Lubimsky, V.M.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Annealing
Argon
Conductivity
Doping
Ion implantation
Piezoresistive devices
Silicon
Stability
Temperature dependence
Virtual reality
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Beschreibung
Zusammenfassung:Polycrystalline silicon offers promise as a pressure sensor material, especially for extended temperature range applications. The investigation of the dependencies of polysilicon layers' physical properties on deposition and annealing parameters is the aim of this work.
DOI:10.1109/MIAME.1999.827838