Increase of Self-Oscillation and Transformation Frequencies in THz Diodes

Planar diode structures with small area active region (∼1 μ m 2 ) based on highly doped GaAs/AlAs superlattices (SLs) are investigated. The possibility of effective application of such diodes in the terahertz frequency range is discussed. Monte Carlo simulation of electron transport in 6-period SLs was carried out. The possibility of increasing the operating frequencies of devices on SLs by optimizing their parameters and selecting the appropriate diode design is discussed. This is achieved by special transition near-contact layers, whose thickness is comparable to the thickness of investigated SL.