Comparison Between High-Holding-Voltage SCR and Stacked Low-Voltage Devices for ESD Protection in High-Voltage Applications

The modified silicon-controlled rectifier (SCR) fabricated in a 0.25- \mu \text{m} high-voltage (HV) bipolar-CMOS-DMOS (BCD) technology has been proposed to seek for both effective electrostatic discharge (ESD) protection and latchup immunity. Experimental results show that one of the proposed SCRs...

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Veröffentlicht in:	IEEE transactions on electron devices 2018-02, Vol.65 (2), p.798-802
Hauptverfasser:	Dai, Chia-Tsen, Ker, Ming-Dou
Format:	Artikel
Sprache:	eng
Schlagworte:	Current measurement Electrostatic discharge (ESD) Electrostatic discharges latchup Robustness silicon-controlled rectifier (SCR) Thyristors Transient analysis Transmission line measurements Voltage measurement
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