A 0.16 /spl mu/m modular BiCMOS (COM2-BiCMOS) technology for RF communication ICs

A 0.16 /spl mu/m modular BiCMOS (COM2-BiCMOS) technology for RF communication ICs

A 0.16 /spl mu/m modular BiCMOS technology (COM2-BiCMOS) has been developed for radio-frequency communication ICs. The technology includes a low-cost, high-performance, single-poly NPN bipolar transistor with f/sub T/=45 GHz and BV/sub CEO/=4.0 V. With a f/sub T/BV/sub CEO/ product of 180 GHz-V, the...

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Bibliographische Detailangaben
Hauptverfasser: Carroll, M.S., Ivanov, T.G., Yih-Feng Chyan, Nguyen, D.P., Chunchieh Huang, Ting-Ih Hsu, Chung Wai Leung, Cochran, W.T.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
BiCMOS integrated circuits
Bipolar transistors
CMOS process
CMOS technology
Communications technology
Costs
Implants
Ion implantation
Radio frequency
Silicon
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Zusammenfassung:A 0.16 /spl mu/m modular BiCMOS technology (COM2-BiCMOS) has been developed for radio-frequency communication ICs. The technology includes a low-cost, high-performance, single-poly NPN bipolar transistor with f/sub T/=45 GHz and BV/sub CEO/=4.0 V. With a f/sub T/BV/sub CEO/ product of 180 GHz-V, the bipolar transistor performance in COM2-BiCMOS is comparable to many double-poly Si or SiGe transistors without the additional process complexity and cost.
DOI:10.1109/IEDM.1999.824284