A 180-GHz monolithic sub-harmonic InP-based HEMT diode mixer

A 180-GHz monolithic sub-harmonic InP-based HEMT diode mixer

A 180-GHz monolithic sub-harmonic diode mixer is developed using 0.08-μm pseudomorphic InAlAs-InGaAs HEMT MMIC process on a 2-mil-thick InP substrate. This mixer demonstrates a conversion loss of better than 16.5 dB from 175 to 182 GHz with an LO drive of 13 dBm at 96 GHz. This is the first demonstr...

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Veröffentlicht in:IEEE microwave and guided wave letters 1999-12, Vol.9 (12), p.529-531
Hauptverfasser: Yon-Lin Kok, Wang, Huei, Barsky, M., Lai, R., Sholley, M., Allen, B.
Format: Artikel
Sprache:eng
Schlagworte:
Applied sciences
Circuit properties
Circuit testing
Conversion
Diodes
Electric, optical and optoelectronic circuits
Electronics
Exact sciences and technology
Frequency
Frequency ranges
HEMTs
High electron mobility transistors
Indium phosphide
Integrated circuit measurements
Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits
Microwave integrated circuits
Microwave measurements
Microwaves
Mixers
MMICs
Noise levels
Semiconductor devices
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Zusammenfassung:A 180-GHz monolithic sub-harmonic diode mixer is developed using 0.08-μm pseudomorphic InAlAs-InGaAs HEMT MMIC process on a 2-mil-thick InP substrate. This mixer demonstrates a conversion loss of better than 16.5 dB from 175 to 182 GHz with an LO drive of 13 dBm at 96 GHz. This is the first demonstration of a monolithic subharmonic HEMT diode mixer in this frequency range. The design and measurement of this monolithic microwave integrated circuit (MMIC) mixer and the waveguide-to-microstrip line transitions of the test-fixture are presented.
ISSN:1051-8207
1558-2329
DOI:10.1109/75.819421