Circulating Resonant Current Between Integrated Half-Bridge Modules With Capacitor for Inverter Circuit Using SiC-MOSFET

This paper proposes a method to suppress the resonant current circulating between integrated half-bridge modules with phase-leg capacitors in two legs. This circuit configuration has the advantage of low stray inductance between power semiconductor devices and dc-link capacitors (phase-leg capacitor...

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Veröffentlicht in:IEEE transactions on industry applications 2018-03, Vol.54 (2), p.1555-1562
Hauptverfasser: Hirao, Takashi, Wada, Keiji, Shimizu, Toshihisa
Format: Artikel
Sprache:eng
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Zusammenfassung:This paper proposes a method to suppress the resonant current circulating between integrated half-bridge modules with phase-leg capacitors in two legs. This circuit configuration has the advantage of low stray inductance between power semiconductor devices and dc-link capacitors (phase-leg capacitors). This paper presents an analysis of the equivalent circuit for the circuit configuration that suggests that the dc-link capacitor current will increase depending on the relationship between resonant and switching frequencies. The capacitor current was experimentally evaluated under pulse-width modulation operation at switching frequencies up to 100 kHz using SiC- mosfet s. As a result, the resonant current may occur in the dc side when the resonant frequency between phase legs was close to either the fundamental or the third harmonic of the switching frequency. In order to suppress the circulating resonant current, a graphite bus bar is applied to the phase-connecting bus bar. Using the graphite bus bar, the capacitor current can be reduced by 35% without any influence from the ac-side output current.
ISSN:0093-9994
1939-9367
DOI:10.1109/TIA.2017.2780240