Experimental characteristics of GaAs-harmonic generators of mm-band

Experimental characteristics of GaAs-harmonic generators of mm-band

Experimental samples of Gunn-diodes had m-n/sup +/-n-n/sup +/-m pattern and were made on the base of epitaxial films of n-GaAs, on low-impedance n/sup +/-substrate with given impurity concentration. The Gunn-diodes with given lengths of active n-area were made. Length of n-area was selected from an...

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Hauptverfasser: Dyadchenko, A.V., Mishnyov, A.A., Prokhorov, E.D., Beletsky, N.I., Polyansky, N.E.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Character generation
Diodes
Frequency
Gallium arsenide
IEEE catalog
Impurities
Kilns
Manufacturing
Organizing
Packaging
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Zusammenfassung:Experimental samples of Gunn-diodes had m-n/sup +/-n-n/sup +/-m pattern and were made on the base of epitaxial films of n-GaAs, on low-impedance n/sup +/-substrate with given impurity concentration. The Gunn-diodes with given lengths of active n-area were made. Length of n-area was selected from an operation condition of the diode in transient-time mode on a base frequency. The Gunn-diodes, designed and manufactured in such a way, had a packageless design.
DOI:10.1109/CRMICO.1999.815157