Optimized charge control for high current ion implantation
A plasma flood system has been developed, having an electron temperature of only 1 eV and a current capability in excess of 100 mA. The design has been carefully optimized to minimize metals contamination, maximize lifetime and maintain arc stability during photoresist outgassing. A self checking fe...
Gespeichert in:
| Hauptverfasser: | , , , , , , , , , , , , , |
|---|---|
| Format: | Tagungsbericht |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 489 vol.1 |
|---|---|
| container_issue | |
| container_start_page | 486 |
| container_title | |
| container_volume | 1 |
| creator | Mack, M.E. Pharand, M. Ameen, M.S. Graf, M. Sawyer, W. Lustiber, P. Fish, D. Moser, B.G. Kabasawa, M. Okada, K. Kawaguchi, H. Mason, P. Persson, E. Santiesteban, R. |
| description | A plasma flood system has been developed, having an electron temperature of only 1 eV and a current capability in excess of 100 mA. The design has been carefully optimized to minimize metals contamination, maximize lifetime and maintain arc stability during photoresist outgassing. A self checking feature has been built in to ensure effective operation. |
| doi_str_mv | 10.1109/IIT.1999.812158 |
| format | Conference Proceeding |
| fullrecord | <record><control><sourceid>ieee_6IE</sourceid><recordid>TN_cdi_ieee_primary_812158</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>812158</ieee_id><sourcerecordid>812158</sourcerecordid><originalsourceid>FETCH-LOGICAL-i87t-8275401b696a1afcd76d08bcd32f6bfa8bbaa66ea826427e15ca55a469a314293</originalsourceid><addsrcrecordid>eNotj0tLxDAURgMiqOOsBVf5A625ecedDD4KA7Ppwt1wm6bTSF-kcaG_3oHx2xzO5sBHyAOwEoC5p6qqS3DOlRY4KHtF7pixTEgl7OcN2a7rFztPOCUU3JLnw5LjGH9DS32P6RSon6ec5oF2c6J9PPXUf6cUpkzjPNE4LgNOGfNZ7sl1h8Matv_ckPrttd59FPvDe7V72RfRmlxYbpRk0GinEbDzrdEts41vBe9006FtGkStA1quJTcBlEelUGqHAiR3YkMeL9kYQjguKY6Yfo6Xc-IPbjtFRg</addsrcrecordid><sourcetype>Publisher</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype></control><display><type>conference_proceeding</type><title>Optimized charge control for high current ion implantation</title><source>IEEE Electronic Library (IEL) Conference Proceedings</source><creator>Mack, M.E. ; Pharand, M. ; Ameen, M.S. ; Graf, M. ; Sawyer, W. ; Lustiber, P. ; Fish, D. ; Moser, B.G. ; Kabasawa, M. ; Okada, K. ; Kawaguchi, H. ; Mason, P. ; Persson, E. ; Santiesteban, R.</creator><creatorcontrib>Mack, M.E. ; Pharand, M. ; Ameen, M.S. ; Graf, M. ; Sawyer, W. ; Lustiber, P. ; Fish, D. ; Moser, B.G. ; Kabasawa, M. ; Okada, K. ; Kawaguchi, H. ; Mason, P. ; Persson, E. ; Santiesteban, R.</creatorcontrib><description>A plasma flood system has been developed, having an electron temperature of only 1 eV and a current capability in excess of 100 mA. The design has been carefully optimized to minimize metals contamination, maximize lifetime and maintain arc stability during photoresist outgassing. A self checking feature has been built in to ensure effective operation.</description><identifier>ISBN: 078034538X</identifier><identifier>ISBN: 9780780345386</identifier><identifier>DOI: 10.1109/IIT.1999.812158</identifier><language>eng</language><publisher>IEEE</publisher><subject>Electrons ; Floods ; Implants ; Ion implantation ; Plasma immersion ion implantation ; Plasma measurements ; Plasma temperature ; Probes ; Resists ; Voltage</subject><ispartof>1998 International Conference on Ion Implantation Technology. Proceedings (Cat. No.98EX144), 1999, Vol.1, p.486-489 vol.1</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/812158$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,780,784,789,790,2058,4050,4051,27925,54920</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/812158$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Mack, M.E.</creatorcontrib><creatorcontrib>Pharand, M.</creatorcontrib><creatorcontrib>Ameen, M.S.</creatorcontrib><creatorcontrib>Graf, M.</creatorcontrib><creatorcontrib>Sawyer, W.</creatorcontrib><creatorcontrib>Lustiber, P.</creatorcontrib><creatorcontrib>Fish, D.</creatorcontrib><creatorcontrib>Moser, B.G.</creatorcontrib><creatorcontrib>Kabasawa, M.</creatorcontrib><creatorcontrib>Okada, K.</creatorcontrib><creatorcontrib>Kawaguchi, H.</creatorcontrib><creatorcontrib>Mason, P.</creatorcontrib><creatorcontrib>Persson, E.</creatorcontrib><creatorcontrib>Santiesteban, R.</creatorcontrib><title>Optimized charge control for high current ion implantation</title><title>1998 International Conference on Ion Implantation Technology. Proceedings (Cat. No.98EX144)</title><addtitle>IIT</addtitle><description>A plasma flood system has been developed, having an electron temperature of only 1 eV and a current capability in excess of 100 mA. The design has been carefully optimized to minimize metals contamination, maximize lifetime and maintain arc stability during photoresist outgassing. A self checking feature has been built in to ensure effective operation.</description><subject>Electrons</subject><subject>Floods</subject><subject>Implants</subject><subject>Ion implantation</subject><subject>Plasma immersion ion implantation</subject><subject>Plasma measurements</subject><subject>Plasma temperature</subject><subject>Probes</subject><subject>Resists</subject><subject>Voltage</subject><isbn>078034538X</isbn><isbn>9780780345386</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>1999</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNotj0tLxDAURgMiqOOsBVf5A625ecedDD4KA7Ppwt1wm6bTSF-kcaG_3oHx2xzO5sBHyAOwEoC5p6qqS3DOlRY4KHtF7pixTEgl7OcN2a7rFztPOCUU3JLnw5LjGH9DS32P6RSon6ec5oF2c6J9PPXUf6cUpkzjPNE4LgNOGfNZ7sl1h8Matv_ckPrttd59FPvDe7V72RfRmlxYbpRk0GinEbDzrdEts41vBe9006FtGkStA1quJTcBlEelUGqHAiR3YkMeL9kYQjguKY6Yfo6Xc-IPbjtFRg</recordid><startdate>1999</startdate><enddate>1999</enddate><creator>Mack, M.E.</creator><creator>Pharand, M.</creator><creator>Ameen, M.S.</creator><creator>Graf, M.</creator><creator>Sawyer, W.</creator><creator>Lustiber, P.</creator><creator>Fish, D.</creator><creator>Moser, B.G.</creator><creator>Kabasawa, M.</creator><creator>Okada, K.</creator><creator>Kawaguchi, H.</creator><creator>Mason, P.</creator><creator>Persson, E.</creator><creator>Santiesteban, R.</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>1999</creationdate><title>Optimized charge control for high current ion implantation</title><author>Mack, M.E. ; Pharand, M. ; Ameen, M.S. ; Graf, M. ; Sawyer, W. ; Lustiber, P. ; Fish, D. ; Moser, B.G. ; Kabasawa, M. ; Okada, K. ; Kawaguchi, H. ; Mason, P. ; Persson, E. ; Santiesteban, R.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i87t-8275401b696a1afcd76d08bcd32f6bfa8bbaa66ea826427e15ca55a469a314293</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>1999</creationdate><topic>Electrons</topic><topic>Floods</topic><topic>Implants</topic><topic>Ion implantation</topic><topic>Plasma immersion ion implantation</topic><topic>Plasma measurements</topic><topic>Plasma temperature</topic><topic>Probes</topic><topic>Resists</topic><topic>Voltage</topic><toplevel>online_resources</toplevel><creatorcontrib>Mack, M.E.</creatorcontrib><creatorcontrib>Pharand, M.</creatorcontrib><creatorcontrib>Ameen, M.S.</creatorcontrib><creatorcontrib>Graf, M.</creatorcontrib><creatorcontrib>Sawyer, W.</creatorcontrib><creatorcontrib>Lustiber, P.</creatorcontrib><creatorcontrib>Fish, D.</creatorcontrib><creatorcontrib>Moser, B.G.</creatorcontrib><creatorcontrib>Kabasawa, M.</creatorcontrib><creatorcontrib>Okada, K.</creatorcontrib><creatorcontrib>Kawaguchi, H.</creatorcontrib><creatorcontrib>Mason, P.</creatorcontrib><creatorcontrib>Persson, E.</creatorcontrib><creatorcontrib>Santiesteban, R.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Mack, M.E.</au><au>Pharand, M.</au><au>Ameen, M.S.</au><au>Graf, M.</au><au>Sawyer, W.</au><au>Lustiber, P.</au><au>Fish, D.</au><au>Moser, B.G.</au><au>Kabasawa, M.</au><au>Okada, K.</au><au>Kawaguchi, H.</au><au>Mason, P.</au><au>Persson, E.</au><au>Santiesteban, R.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Optimized charge control for high current ion implantation</atitle><btitle>1998 International Conference on Ion Implantation Technology. Proceedings (Cat. No.98EX144)</btitle><stitle>IIT</stitle><date>1999</date><risdate>1999</risdate><volume>1</volume><spage>486</spage><epage>489 vol.1</epage><pages>486-489 vol.1</pages><isbn>078034538X</isbn><isbn>9780780345386</isbn><abstract>A plasma flood system has been developed, having an electron temperature of only 1 eV and a current capability in excess of 100 mA. The design has been carefully optimized to minimize metals contamination, maximize lifetime and maintain arc stability during photoresist outgassing. A self checking feature has been built in to ensure effective operation.</abstract><pub>IEEE</pub><doi>10.1109/IIT.1999.812158</doi></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | ISBN: 078034538X |
| ispartof | 1998 International Conference on Ion Implantation Technology. Proceedings (Cat. No.98EX144), 1999, Vol.1, p.486-489 vol.1 |
| issn | |
| language | eng |
| recordid | cdi_ieee_primary_812158 |
| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Electrons Floods Implants Ion implantation Plasma immersion ion implantation Plasma measurements Plasma temperature Probes Resists Voltage |
| title | Optimized charge control for high current ion implantation |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-01T05%3A12%3A01IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-ieee_6IE&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=proceeding&rft.atitle=Optimized%20charge%20control%20for%20high%20current%20ion%20implantation&rft.btitle=1998%20International%20Conference%20on%20Ion%20Implantation%20Technology.%20Proceedings%20(Cat.%20No.98EX144)&rft.au=Mack,%20M.E.&rft.date=1999&rft.volume=1&rft.spage=486&rft.epage=489%20vol.1&rft.pages=486-489%20vol.1&rft.isbn=078034538X&rft.isbn_list=9780780345386&rft_id=info:doi/10.1109/IIT.1999.812158&rft_dat=%3Cieee_6IE%3E812158%3C/ieee_6IE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rft_ieee_id=812158&rfr_iscdi=true |