Optimized charge control for high current ion implantation

Optimized charge control for high current ion implantation

A plasma flood system has been developed, having an electron temperature of only 1 eV and a current capability in excess of 100 mA. The design has been carefully optimized to minimize metals contamination, maximize lifetime and maintain arc stability during photoresist outgassing. A self checking fe...

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Bibliographische Detailangaben
Hauptverfasser: Mack, M.E., Pharand, M., Ameen, M.S., Graf, M., Sawyer, W., Lustiber, P., Fish, D., Moser, B.G., Kabasawa, M., Okada, K., Kawaguchi, H., Mason, P., Persson, E., Santiesteban, R.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Electrons
Floods
Implants
Ion implantation
Plasma immersion ion implantation
Plasma measurements
Plasma temperature
Probes
Resists
Voltage
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Beschreibung
Zusammenfassung:A plasma flood system has been developed, having an electron temperature of only 1 eV and a current capability in excess of 100 mA. The design has been carefully optimized to minimize metals contamination, maximize lifetime and maintain arc stability during photoresist outgassing. A self checking feature has been built in to ensure effective operation.
DOI:10.1109/IIT.1999.812158