Comparison of spontaneous and stimulated emission from UV-blue photonic materials

Comparison of spontaneous and stimulated emission from UV-blue photonic materials

We have systematically studied both the spontaneous and stimulated emission (SE) behavior in GaN, InGaN, and AlGaN thin films by means of photoluminescence (PL), PL excitation, time-resolved PL, and optical pumping. All the epilayers were grown by metalorganic chemical vapor deposition (MOCVD). Reco...

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Hauptverfasser: Little, B.D., Yong-Hoon Cho, Schmidt, T.J., Gainer, G.H., Lam, J.B., Song, J.J., Yang, W., Keller, S., Mishra, U.K., DenBaars, S.P., Jhe, W.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Aluminum gallium nitride
Chemical vapor deposition
Gallium nitride
MOCVD
Optical films
Optical pumping
Photoluminescence
Stimulated emission
Temperature distribution
Transistors
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Beschreibung
Zusammenfassung:We have systematically studied both the spontaneous and stimulated emission (SE) behavior in GaN, InGaN, and AlGaN thin films by means of photoluminescence (PL), PL excitation, time-resolved PL, and optical pumping. All the epilayers were grown by metalorganic chemical vapor deposition (MOCVD). Recombination in the GaN thin films was found to be affected by non-radiative processes in the temperature range of 10 - 300 K.
DOI:10.1109/CLEOPR.1999.811418