A technique to avoid micropipe effects on 6H-SiC power devices

A technique to avoid micropipe effects on 6H-SiC power devices

A cellular structure for 6H-SiC power devices is discussed. Using a matrix structure with 0.16 mm/sup 2/ cell area, a medium power (600 V breakdown voltage and 1 A at a forward voltage of 5 V) pn diode has been fabricated and tested. A technique to separate and connect the good cells has been used.

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Bibliographische Detailangaben
Hauptverfasser: Badila, M., Brezeanu, G., Chante, J.P., Locatelli, M.-L., Millan, J., Godignon, P., Lungu, P., Mitu, F., Draghici, F., Campos, F.J., Lebedev, A., Banu, V., Banoiu, G.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Diodes
Electronic equipment testing
Etching
Fabrication
Fasteners
Silicon carbide
Substrates
Temperature
Thermal conductivity
Voltage
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Beschreibung
Zusammenfassung:A cellular structure for 6H-SiC power devices is discussed. Using a matrix structure with 0.16 mm/sup 2/ cell area, a medium power (600 V breakdown voltage and 1 A at a forward voltage of 5 V) pn diode has been fabricated and tested. A technique to separate and connect the good cells has been used.
DOI:10.1109/SMICND.1999.810459