Analysis of abnormal Pch Vt distribution in wafer caused by implanter

Analysis of abnormal Pch Vt distribution in wafer caused by implanter

In this paper, we report an analysis in which the abnormal p-channel threshold voltage (Pch Vt) distribution in a wafer was found to be due to the malfunction of an implanter at the Pch Vt adjustment step. The analysis was performed using a pulse C-V method and experiments with production wafers. As...

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Hauptverfasser: Nishimura, K., Maeda, T., Inoue, T., Suzuki, T., Katsumoto, K.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Annealing
Capacitance-voltage characteristics
Electrical resistance measurement
Ion implantation
Large scale integration
Leakage current
Monitoring
Production
Thermal resistance
Threshold voltage
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Beschreibung
Zusammenfassung:In this paper, we report an analysis in which the abnormal p-channel threshold voltage (Pch Vt) distribution in a wafer was found to be due to the malfunction of an implanter at the Pch Vt adjustment step. The analysis was performed using a pulse C-V method and experiments with production wafers. As the conventional thermal wave and Rs measurements were not sensitive enough for this problem, the methodology of the monitoring method is discussed through our experiences.
ISSN:1523-553X
DOI:10.1109/ISSM.1999.808806