The VHDL-MOS package for transistor-level event-driven simulation
This paper presents a VHDL package, called VHDL-MOS, which allows the mixed-mode simulation of deep submicron CMOS circuits using an event-driven simulator. Digital gate-level descriptions can coexist with analog-like transistor-level descriptions inside the same event-driven simulation kernel. Accu...
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Format: | Tagungsbericht |
Sprache: | eng |
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Zusammenfassung: | This paper presents a VHDL package, called VHDL-MOS, which allows the mixed-mode simulation of deep submicron CMOS circuits using an event-driven simulator. Digital gate-level descriptions can coexist with analog-like transistor-level descriptions inside the same event-driven simulation kernel. Accurate waveforms, timing, and power analysis are obtained for the analog-like described part of the circuit. Simulation results show the efficiency and accuracy in simulating large deep-submicron circuits. |
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DOI: | 10.1109/ASIC.1999.806480 |