BC35: a 0.35 /spl mu/m, 30 GHz production RF BiCMOS technology

BC35, a 0.35 /spl mu/m RF BiCMOS production process on 200 mm wafers is described. BC35 includes 0.35 /spl mu/m CMOS, RF passive elements and two NPNs with peak Ft of 32 and 23 GHz, peak Fmax of 74 and 50 GHz and BVceo of 3.8 and 6.2 V respectively. Enhancements to this production process are also d...

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Hauptverfasser:	Racanelli, M., Zhe Zhang, Jie Zheng, Kar-Roy, A., Joshi, P., Kalburge, A., Nathawad, L., Todd, M., Ukah, C., Chun Hu, Compton, G., Schuegraf, K., Peihua Ye, Dowlatshahi, R., Jolly, G., Kempf, P.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	BiCMOS integrated circuits Capacitance CMOS process Implants MIM capacitors Pattern matching Production Radio frequency Surface topography Voltage
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