BC35: a 0.35 /spl mu/m, 30 GHz production RF BiCMOS technology

BC35: a 0.35 /spl mu/m, 30 GHz production RF BiCMOS technology

BC35, a 0.35 /spl mu/m RF BiCMOS production process on 200 mm wafers is described. BC35 includes 0.35 /spl mu/m CMOS, RF passive elements and two NPNs with peak Ft of 32 and 23 GHz, peak Fmax of 74 and 50 GHz and BVceo of 3.8 and 6.2 V respectively. Enhancements to this production process are also d...

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Bibliographische Detailangaben
Hauptverfasser: Racanelli, M., Zhe Zhang, Jie Zheng, Kar-Roy, A., Joshi, P., Kalburge, A., Nathawad, L., Todd, M., Ukah, C., Chun Hu, Compton, G., Schuegraf, K., Peihua Ye, Dowlatshahi, R., Jolly, G., Kempf, P.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
BiCMOS integrated circuits
Capacitance
CMOS process
Implants
MIM capacitors
Pattern matching
Production
Radio frequency
Surface topography
Voltage
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Beschreibung
Zusammenfassung:BC35, a 0.35 /spl mu/m RF BiCMOS production process on 200 mm wafers is described. BC35 includes 0.35 /spl mu/m CMOS, RF passive elements and two NPNs with peak Ft of 32 and 23 GHz, peak Fmax of 74 and 50 GHz and BVceo of 3.8 and 6.2 V respectively. Enhancements to this production process are also described including the addition of a SiGe epi base to increase peak Ft to 53 GHz and the reduction of emitter width to achieve a 2 GHz NFmin of 0.69 dB.
ISSN:1088-5714
DOI:10.1109/BIPOL.1999.803541