The Effects of Taper-Angle on the Electrical Characteristics of Vertical NAND Flash Memories

The Effects of Taper-Angle on the Electrical Characteristics of Vertical NAND Flash Memories

The effects of taper angle of the string and the number of layers on the electrical characteristics of vertical NAND flash memories are investigated. Simulation results show that the transconductance and the threshold voltage distribution over the position of the cell along the string depend on tape...

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Veröffentlicht in:IEEE electron device letters 2017-10, Vol.38 (10), p.1375-1378
Hauptverfasser: Kim, Kee Tae, An, Sung Woo, Jung, Hyun Soo, Yoo, Keon-Ho, Kim, Tae Whan
Format: Artikel
Sprache:eng
Schlagworte:
3-D flash memories
Flash memories
Logic gates
Resistance
taper angle
Threshold voltage
Transconductance
Transistors
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Zusammenfassung:The effects of taper angle of the string and the number of layers on the electrical characteristics of vertical NAND flash memories are investigated. Simulation results show that the transconductance and the threshold voltage distribution over the position of the cell along the string depend on taper angle and the number of layers. There is a taper angle that minimizes the spread of threshold voltage, and hence, the impact of the random telegraph noise and this angle depends on the number of layers. These results will be helpful in designing the vertical NAND flash memories.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2017.2747631