Comparison between patterned and unpatterned electrodeposited spin-valve sensors

Electrodeposited spin-valves on GaAs substrates were patterned down into 80 /spl mu/m, 4 /spl mu/m and 2 /spl mu/m strips. A symmetric spin-valve configuration is used which incorporates an artificially hard substructure. Sensitivities up to 1.5%/Oe were observed, these being the highest ever observ...

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Veröffentlicht in:	IEEE transactions on magnetics 1999-09, Vol.35 (5), p.3094-3096
Hauptverfasser:	Attenborough, K., Boeve, H., De Boeck, J., Borghs, G., Celis, J.-P.
Format:	Artikel
Sprache:	eng
Schlagworte:	Antiferromagnetic materials Buffer layers Condensed matter: electronic structure, electrical, magnetic, and optical properties Electrical resistance measurement Exact sciences and technology Gallium arsenide Giant magnetoresistance Magnetic field measurement Magnetic properties and materials Magnetic separation Magnetotransport phenomena, materials for magnetotransport Physics Resists Semiconductor device measurement Strips Substrates
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Beschreibung
Zusammenfassung:	Electrodeposited spin-valves on GaAs substrates were patterned down into 80 /spl mu/m, 4 /spl mu/m and 2 /spl mu/m strips. A symmetric spin-valve configuration is used which incorporates an artificially hard substructure. Sensitivities up to 1.5%/Oe were observed, these being the highest ever observed in electrodeposited structures. Upon patterning an increased antiferromagnetic contribution of the inner hard substructure was seen.
ISSN:	0018-9464 1941-0069
DOI:	10.1109/20.801095