Analysis of Short-Channel Effects in Junctionless DG MOSFETs

Analysis of Short-Channel Effects in Junctionless DG MOSFETs

This brief investigates short-channel effects (SCEs) in junctionless (JL) double-gate (DG) MOSFETs analytically by solving the 2-D potential in subthreshold. Ids-Vg curves and Vt rolloff generated from the model are validated by 2-D numerical simulations (Technology Computer Aided Design). It is sho...

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Veröffentlicht in:IEEE transactions on electron devices 2017-08, Vol.64 (8), p.3511-3514
Hauptverfasser: Xie, Qian, Wang, Zheng, Taur, Yuan
Format: Artikel
Sprache:eng
Schlagworte:
Analytical models
Doping
Double gate (DG)
Electric potential
junctionless (JL)
Logic gates
MOSFET
MOSFETS
Semiconductor device modeling
short-channel effects (SCEs)
Silicon
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Zusammenfassung:This brief investigates short-channel effects (SCEs) in junctionless (JL) double-gate (DG) MOSFETs analytically by solving the 2-D potential in subthreshold. Ids-Vg curves and Vt rolloff generated from the model are validated by 2-D numerical simulations (Technology Computer Aided Design). It is shown that the SCE of JL MOSFETs is inherently worse than that of undoped DG MOSFETs. The SCE worsens with increasing doping concentration in the channel.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2017.2716969