In situ-doped amorphous Si/sub 0.8/C/sub 0.2/ emitter bipolar transistors

In situ-doped amorphous Si/sub 0.8/C/sub 0.2/ emitter bipolar transistors

The fabrication and characterization of in situ-doped amorphous Si/sub 0.8/C/sub 0.2/ emitter transistors are presented. Emitter Gummel numbers exceeding 10/sup 14/ s/cm/sup 4/ are reported for the first time in this type of structure. The high values obtained for G/sub E/ are believed to be due to...

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Veröffentlicht in:IEEE electron device letters 1999-11, Vol.20 (11), p.592-594
Hauptverfasser: Orpella, A., Bardes, D., Alcubilla, R., Marsal, L.F., Pallares, J.
Format: Artikel
Sprache:eng
Schlagworte:
Amorphous materials
Annealing
Bipolar transistors
Conductivity
Crystalline materials
Crystallization
Fabrication
Heterojunctions
Silicon
Stimulated emission
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Zusammenfassung:The fabrication and characterization of in situ-doped amorphous Si/sub 0.8/C/sub 0.2/ emitter transistors are presented. Emitter Gummel numbers exceeding 10/sup 14/ s/cm/sup 4/ are reported for the first time in this type of structure. The high values obtained for G/sub E/ are believed to be due to the valance band discontinuity between the Si/sub 0.8/C/sub 0.2/ layer and the crystalline part of the emitter, which effectively blocks the minority carrier injection from the base into the noncrystalline part of the emitter.
ISSN:0741-3106
1558-0563
DOI:10.1109/55.798054