Anomalously high damping in strained InGaAs-GaAs single quantum well lasers

Measurements of the relative intensity noise spectra of strained, single-quantum-well, separate-confinement-heterostructure (SCH) InGaAs-GaAs lasers indicate that their frequency response is strongly damped. The ratio of the damping rate to the square of the resonance frequency is k=2.4 ns. This int...

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Veröffentlicht in:IEEE photonics technology letters 1991-03, Vol.3 (3), p.193-195
Hauptverfasser: Sharfin, W.F., Schlafer, J., Rideout, W., Elman, B., Lauer, R.B., LaCourse, J., Crawford, F.D.
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container_issue 3
container_start_page 193
container_title IEEE photonics technology letters
container_volume 3
creator Sharfin, W.F.
Schlafer, J.
Rideout, W.
Elman, B.
Lauer, R.B.
LaCourse, J.
Crawford, F.D.
description Measurements of the relative intensity noise spectra of strained, single-quantum-well, separate-confinement-heterostructure (SCH) InGaAs-GaAs lasers indicate that their frequency response is strongly damped. The ratio of the damping rate to the square of the resonance frequency is k=2.4 ns. This intrinsically limits the 3-dB modulation bandwidths of these lasers to about 4 GHz, negating the predicted increase in modulation bandwidth due to the large differential gain often associated with quantum-well devices. The damping behavior of these lasers is inconsistent with previous predictions of damping in bulk lasers due to spectral hole burning. A structure-dependent damping mechanism is proposed for quantum-well lasers.< >
doi_str_mv 10.1109/68.79750
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subjects Bandwidth
Damping
Frequency response
Gallium arsenide
Laser noise
Nonlinear optics
Optical saturation
Quantum well lasers
Resonance
Resonant frequency
title Anomalously high damping in strained InGaAs-GaAs single quantum well lasers
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