Anomalously high damping in strained InGaAs-GaAs single quantum well lasers

Anomalously high damping in strained InGaAs-GaAs single quantum well lasers

Measurements of the relative intensity noise spectra of strained, single-quantum-well, separate-confinement-heterostructure (SCH) InGaAs-GaAs lasers indicate that their frequency response is strongly damped. The ratio of the damping rate to the square of the resonance frequency is k=2.4 ns. This int...

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Veröffentlicht in:IEEE photonics technology letters 1991-03, Vol.3 (3), p.193-195
Hauptverfasser: Sharfin, W.F., Schlafer, J., Rideout, W., Elman, B., Lauer, R.B., LaCourse, J., Crawford, F.D.
Format: Artikel
Sprache:eng
Schlagworte:
Bandwidth
Damping
Frequency response
Gallium arsenide
Laser noise
Nonlinear optics
Optical saturation
Quantum well lasers
Resonance
Resonant frequency
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Zusammenfassung:Measurements of the relative intensity noise spectra of strained, single-quantum-well, separate-confinement-heterostructure (SCH) InGaAs-GaAs lasers indicate that their frequency response is strongly damped. The ratio of the damping rate to the square of the resonance frequency is k=2.4 ns. This intrinsically limits the 3-dB modulation bandwidths of these lasers to about 4 GHz, negating the predicted increase in modulation bandwidth due to the large differential gain often associated with quantum-well devices. The damping behavior of these lasers is inconsistent with previous predictions of damping in bulk lasers due to spectral hole burning. A structure-dependent damping mechanism is proposed for quantum-well lasers.< >
ISSN:1041-1135
1941-0174
DOI:10.1109/68.79750