Transparent and Flexible Resistive Random Access Memory Based on Al2O3 Film With Multilayer Electrodes
We report a transparent and flexible resistive random access memory (ReRAM) using a multi-thin-layer electrode. The transparent and flexible ReRAM includes a multi-thin-layer electrode that is transparent and flexible and an Al 2 O 3 layer as a transparent oxide material. When the multi-thin-layer e...
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| Veröffentlicht in: | IEEE transactions on electron devices 2017-08, Vol.64 (8), p.3508-3510 |
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| container_title | IEEE transactions on electron devices |
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| creator | Myeongcheol Kim Kyung Cheol Choi |
| description | We report a transparent and flexible resistive random access memory (ReRAM) using a multi-thin-layer electrode. The transparent and flexible ReRAM includes a multi-thin-layer electrode that is transparent and flexible and an Al 2 O 3 layer as a transparent oxide material. When the multi-thin-layer electrode is used for the top and bottom electrode for the ReRAM, the ReRAM has transparent and flexible properties. The stable memory operation uses a Ti layer and an MgO layer between the Al 2 O 3 layer and multi-thin-layer electrodes. The transmittance of the ReRAM is over 70% at a visible wavelength on a PET substrate. We believe this transparent and flexible ReRAM will be useful for transparent and flexible electronic devices in the future. |
| doi_str_mv | 10.1109/TED.2017.2716831 |
| format | Article |
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The transparent and flexible ReRAM includes a multi-thin-layer electrode that is transparent and flexible and an Al 2 O 3 layer as a transparent oxide material. When the multi-thin-layer electrode is used for the top and bottom electrode for the ReRAM, the ReRAM has transparent and flexible properties. The stable memory operation uses a Ti layer and an MgO layer between the Al 2 O 3 layer and multi-thin-layer electrodes. The transmittance of the ReRAM is over 70% at a visible wavelength on a PET substrate. We believe this transparent and flexible ReRAM will be useful for transparent and flexible electronic devices in the future.</description><identifier>ISSN: 0018-9383</identifier><identifier>EISSN: 1557-9646</identifier><identifier>DOI: 10.1109/TED.2017.2716831</identifier><identifier>CODEN: IETDAI</identifier><language>eng</language><publisher>IEEE</publisher><subject>Aluminum oxide ; Electrodes ; Flexible ; II-VI semiconductor materials ; memory ; multilayer electrode ; Resistance ; resistive ; Substrates ; Switches ; transparent ; Zinc compounds</subject><ispartof>IEEE transactions on electron devices, 2017-08, Vol.64 (8), p.3508-3510</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/7955076$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,796,27924,27925,54758</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/7955076$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Myeongcheol Kim</creatorcontrib><creatorcontrib>Kyung Cheol Choi</creatorcontrib><title>Transparent and Flexible Resistive Random Access Memory Based on Al2O3 Film With Multilayer Electrodes</title><title>IEEE transactions on electron devices</title><addtitle>TED</addtitle><description>We report a transparent and flexible resistive random access memory (ReRAM) using a multi-thin-layer electrode. The transparent and flexible ReRAM includes a multi-thin-layer electrode that is transparent and flexible and an Al 2 O 3 layer as a transparent oxide material. When the multi-thin-layer electrode is used for the top and bottom electrode for the ReRAM, the ReRAM has transparent and flexible properties. The stable memory operation uses a Ti layer and an MgO layer between the Al 2 O 3 layer and multi-thin-layer electrodes. The transmittance of the ReRAM is over 70% at a visible wavelength on a PET substrate. We believe this transparent and flexible ReRAM will be useful for transparent and flexible electronic devices in the future.</description><subject>Aluminum oxide</subject><subject>Electrodes</subject><subject>Flexible</subject><subject>II-VI semiconductor materials</subject><subject>memory</subject><subject>multilayer electrode</subject><subject>Resistance</subject><subject>resistive</subject><subject>Substrates</subject><subject>Switches</subject><subject>transparent</subject><subject>Zinc compounds</subject><issn>0018-9383</issn><issn>1557-9646</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2017</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNotjM1KAzEYRYMoWKt7wU1eYGp-J8my1o4KLQWpuCzJ5AtGMjMlGcV5ewu6uuecxUXolpIFpcTc79ePC0aoWjBFa83pGZpRKVVlalGfoxkhVFeGa36Jrkr5PGktBJuhsM-2L0eboR-x7T1uEvxElwC_QolljN8nOvWhw8u2hVLwFrohT_jBFvB46PEysR3HTUwdfo_jB95-pTEmO0HG6wTtmAcP5RpdBJsK3PzvHL016_3qudrsnl5Wy00VqZJjpTkJjgYwrtWaiuCMtS2zoubeB9tK5i3TTAbtCQuaWSecC4qx4DQJ1Ag-R3d_vxEADsccO5ungzJSElXzXxGKVns</recordid><startdate>201708</startdate><enddate>201708</enddate><creator>Myeongcheol Kim</creator><creator>Kyung Cheol Choi</creator><general>IEEE</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope></search><sort><creationdate>201708</creationdate><title>Transparent and Flexible Resistive Random Access Memory Based on Al2O3 Film With Multilayer Electrodes</title><author>Myeongcheol Kim ; Kyung Cheol Choi</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i175t-830fb1fe9bc8814fb9aac2a463ddfac52da2825f8d02f82ab4bbf722fb80f1943</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2017</creationdate><topic>Aluminum oxide</topic><topic>Electrodes</topic><topic>Flexible</topic><topic>II-VI semiconductor materials</topic><topic>memory</topic><topic>multilayer electrode</topic><topic>Resistance</topic><topic>resistive</topic><topic>Substrates</topic><topic>Switches</topic><topic>transparent</topic><topic>Zinc compounds</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Myeongcheol Kim</creatorcontrib><creatorcontrib>Kyung Cheol Choi</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><jtitle>IEEE transactions on electron devices</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Myeongcheol Kim</au><au>Kyung Cheol Choi</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Transparent and Flexible Resistive Random Access Memory Based on Al2O3 Film With Multilayer Electrodes</atitle><jtitle>IEEE transactions on electron devices</jtitle><stitle>TED</stitle><date>2017-08</date><risdate>2017</risdate><volume>64</volume><issue>8</issue><spage>3508</spage><epage>3510</epage><pages>3508-3510</pages><issn>0018-9383</issn><eissn>1557-9646</eissn><coden>IETDAI</coden><abstract>We report a transparent and flexible resistive random access memory (ReRAM) using a multi-thin-layer electrode. The transparent and flexible ReRAM includes a multi-thin-layer electrode that is transparent and flexible and an Al 2 O 3 layer as a transparent oxide material. When the multi-thin-layer electrode is used for the top and bottom electrode for the ReRAM, the ReRAM has transparent and flexible properties. The stable memory operation uses a Ti layer and an MgO layer between the Al 2 O 3 layer and multi-thin-layer electrodes. The transmittance of the ReRAM is over 70% at a visible wavelength on a PET substrate. We believe this transparent and flexible ReRAM will be useful for transparent and flexible electronic devices in the future.</abstract><pub>IEEE</pub><doi>10.1109/TED.2017.2716831</doi><tpages>3</tpages></addata></record> |
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| subjects | Aluminum oxide Electrodes Flexible II-VI semiconductor materials memory multilayer electrode Resistance resistive Substrates Switches transparent Zinc compounds |
| title | Transparent and Flexible Resistive Random Access Memory Based on Al2O3 Film With Multilayer Electrodes |
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