Transparent and Flexible Resistive Random Access Memory Based on Al2O3 Film With Multilayer Electrodes

We report a transparent and flexible resistive random access memory (ReRAM) using a multi-thin-layer electrode. The transparent and flexible ReRAM includes a multi-thin-layer electrode that is transparent and flexible and an Al 2 O 3 layer as a transparent oxide material. When the multi-thin-layer electrode is used for the top and bottom electrode for the ReRAM, the ReRAM has transparent and flexible properties. The stable memory operation uses a Ti layer and an MgO layer between the Al 2 O 3 layer and multi-thin-layer electrodes. The transmittance of the ReRAM is over 70% at a visible wavelength on a PET substrate. We believe this transparent and flexible ReRAM will be useful for transparent and flexible electronic devices in the future.