Transparent contact to p-GaN: indium tin oxide/titanium nitride

Transparent contact to p-GaN: indium tin oxide/titanium nitride

We demonstrate the possible use of TiN/ITO as an intracavity p-contact in GaN-based vertical light emitting devices. While having very low optical loss, it provides efficient current spreading and high current density carrying capacity.

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Bibliographische Detailangaben
Hauptverfasser: Buchinsky, O., Margalith, T., Cohen, D.A., Abare, A.C., DenBaarst, S.P., Coldren, L.A.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Current density
Indium tin oxide
Light emitting diodes
Optical losses
Plasma temperature
Sputtering
Thermal conductivity
Titanium
Vertical cavity surface emitting lasers
Voltage
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Beschreibung
Zusammenfassung:We demonstrate the possible use of TiN/ITO as an intracavity p-contact in GaN-based vertical light emitting devices. While having very low optical loss, it provides efficient current spreading and high current density carrying capacity.
DOI:10.1109/LEOSST.1999.794723