A Novel Small-Signal Model for Bulk FinFETs Accommodating Self-Heating Behaviors

A Novel Small-Signal Model for Bulk FinFETs Accommodating Self-Heating Behaviors

A novel small-signal model for bulk FinFETs is presented. A parallel combination of resistance-inductance networks originated from the self-heating is obtained. A new transfer gain model is developed. An analytical method to extract the model parameters is proposed. The model is validated using sili...

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Veröffentlicht in:IEEE electron device letters 2017-07, Vol.38 (7), p.839-842
Hauptverfasser: Liu, Jun, Ren, Kun, Sun, Lingling, Yu, Zhiping
Format: Artikel
Sprache:eng
Schlagworte:
Bulk FinFETs
Equivalent circuits
FinFETs
Integrated circuit modeling
Object recognition
selfheating effect
Semiconductor device modeling
small-signal model
Temperature dependence
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Zusammenfassung:A novel small-signal model for bulk FinFETs is presented. A parallel combination of resistance-inductance networks originated from the self-heating is obtained. A new transfer gain model is developed. An analytical method to extract the model parameters is proposed. The model is validated using silicon Multi-Fin MOSFET manufactured in SMICs 14 nm bulk FinFET technology. Excellent agreements are achieved between measured and model simulated Y-parameters in the range over 100 to 50.2 GHz.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2017.2707283