1200 V SiC IE-UMOSFET with low on-resistance and high threshold voltage
A critical issue with the SiC UMOSFET is the need to develop a shielding structure for the gate oxide at the trench bottom without any increase in the JFET resistance. This study describes our new UMOSFET named IE-UMOSFET, which we developed to cope with this trade-off. A simulation showed that a lo...
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| Veröffentlicht in: | 2016 European Conference on Silicon Carbide & Related Materials (ECSCRM) 2017-05, Vol.897, p.1-1 |
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| creator | Harada, S. Kobayashi, Y. Kinoshita, A. Ohse, N. Kojima, T. Iwaya, M. Shiomi, H. Kitai, H. Kyogoku, S. Ariyoshi, K. Onishi, Y. Kimura, H. |
| description | A critical issue with the SiC UMOSFET is the need to develop a shielding structure for the gate oxide at the trench bottom without any increase in the JFET resistance. This study describes our new UMOSFET named IE-UMOSFET, which we developed to cope with this trade-off. A simulation showed that a low on-resistance is accompanied by an extremely low gate oxide field even with a negative gate voltage. The low R onA was sustained as V th increases. The R onA values at V G =25 V (E ox =3.2 MV/cm) and V G =20V (E ox =2.5 MV/cm), respectively, for the 3mm × 3mm device were 2.4 and 2.8 mΩcm 2 with a lowest V th of 2.4 V, and 3.1 and 4.4 mΩcm 2 with a high V th of 5.9 V. |
| doi_str_mv | 10.4028/www.scientific.net/MSF.897.497 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_ieee_</sourceid><recordid>TN_cdi_ieee_primary_7921315</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>7921315</ieee_id><sourcerecordid>1900220150</sourcerecordid><originalsourceid>FETCH-LOGICAL-c3527-8129c5962ef0b5095498b2ab6eacd0d02b678b6914e62f8fca9e63e9017fd17f3</originalsourceid><addsrcrecordid>eNqNkE1LxDAQhqMo-PkLvAQEb62TpE2biyjLui4oHla9hjSd2sjaapO1-O-NrOgePQwzDC_PCw8hZwzSDHh5Po5j6q3DLrjG2bTDcH63uE5LVaSZKrbIgQCRFwIywbbJPpOSJ6rI-c7GvUcOvH8BEKxkcp_MGAegT3ThJnQ-TR7v7hfX0wc6utDSZT_SvksG9M4H01mkpqtp655bGtr4bftlTT_6ZTDPeER2G7P0ePyzD8lj5Exuktv72XxydZtYkfMiKRlXNleSYwNVDirPVFlxU0k0toYaeCWLspKKZSh5UzbWKJQCFbCiqeOIQ3K65r4N_fsKfdAv_WroYqVmCoBzYDnE1MU6ZYfe-wEb_Ta4VzN8agb626SOJvWfSR1N6mhSR5M6moyAyzUgDKbzAW270fNfxMka4RDxt79QnAmWiy9mj4ky</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1900220150</pqid></control><display><type>article</type><title>1200 V SiC IE-UMOSFET with low on-resistance and high threshold voltage</title><source>ProQuest Central Essentials</source><source>ProQuest Central (Alumni Edition)</source><source>ProQuest Central Student</source><source>Scientific.net Journals</source><creator>Harada, S. ; Kobayashi, Y. ; Kinoshita, A. ; Ohse, N. ; Kojima, T. ; Iwaya, M. ; Shiomi, H. ; Kitai, H. ; Kyogoku, S. ; Ariyoshi, K. ; Onishi, Y. ; Kimura, H.</creator><creatorcontrib>Harada, S. ; Kobayashi, Y. ; Kinoshita, A. ; Ohse, N. ; Kojima, T. ; Iwaya, M. ; Shiomi, H. ; Kitai, H. ; Kyogoku, S. ; Ariyoshi, K. ; Onishi, Y. ; Kimura, H.</creatorcontrib><description>A critical issue with the SiC UMOSFET is the need to develop a shielding structure for the gate oxide at the trench bottom without any increase in the JFET resistance. This study describes our new UMOSFET named IE-UMOSFET, which we developed to cope with this trade-off. A simulation showed that a low on-resistance is accompanied by an extremely low gate oxide field even with a negative gate voltage. The low R onA was sustained as V th increases. The R onA values at V G =25 V (E ox =3.2 MV/cm) and V G =20V (E ox =2.5 MV/cm), respectively, for the 3mm × 3mm device were 2.4 and 2.8 mΩcm 2 with a lowest V th of 2.4 V, and 3.1 and 4.4 mΩcm 2 with a high V th of 5.9 V.</description><identifier>ISSN: 1662-9752</identifier><identifier>ISSN: 0255-5476</identifier><identifier>EISSN: 1662-9752</identifier><identifier>EISBN: 3035730431</identifier><identifier>EISBN: 9783035730432</identifier><identifier>DOI: 10.4028/www.scientific.net/MSF.897.497</identifier><language>eng</language><publisher>Pfaffikon: Trans Tech Publications Ltd</publisher><subject>Electrons ; Epitaxial growth ; IE-UMOSFET ; JFET ; JFETs ; Logic gates ; MOSFET ; on-resistance ; Resistance ; Shielding ; Silicon carbide ; Threshold voltage ; Trench ; UMOSFET</subject><ispartof>2016 European Conference on Silicon Carbide & Related Materials (ECSCRM), 2017-05, Vol.897, p.1-1</ispartof><rights>2017 Trans Tech Publications Ltd</rights><rights>Copyright Trans Tech Publications Ltd. May 2017</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c3527-8129c5962ef0b5095498b2ab6eacd0d02b678b6914e62f8fca9e63e9017fd17f3</citedby><orcidid>0000-0002-0053-4606</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Uhttps://www.scientific.net/Image/TitleCover/4395?width=600</thumbnail><linktohtml>$$Uhttps://www.proquest.com/docview/1900220150?pq-origsite=primo$$EHTML$$P50$$Gproquest$$H</linktohtml><link.rule.ids>309,310,314,778,782,787,788,21372,21373,23239,23913,23914,25123,27907,27908,33513,33686,34297,43642,43770,44050</link.rule.ids></links><search><creatorcontrib>Harada, S.</creatorcontrib><creatorcontrib>Kobayashi, Y.</creatorcontrib><creatorcontrib>Kinoshita, A.</creatorcontrib><creatorcontrib>Ohse, N.</creatorcontrib><creatorcontrib>Kojima, T.</creatorcontrib><creatorcontrib>Iwaya, M.</creatorcontrib><creatorcontrib>Shiomi, H.</creatorcontrib><creatorcontrib>Kitai, H.</creatorcontrib><creatorcontrib>Kyogoku, S.</creatorcontrib><creatorcontrib>Ariyoshi, K.</creatorcontrib><creatorcontrib>Onishi, Y.</creatorcontrib><creatorcontrib>Kimura, H.</creatorcontrib><title>1200 V SiC IE-UMOSFET with low on-resistance and high threshold voltage</title><title>2016 European Conference on Silicon Carbide & Related Materials (ECSCRM)</title><addtitle>ECSCRM</addtitle><description>A critical issue with the SiC UMOSFET is the need to develop a shielding structure for the gate oxide at the trench bottom without any increase in the JFET resistance. This study describes our new UMOSFET named IE-UMOSFET, which we developed to cope with this trade-off. A simulation showed that a low on-resistance is accompanied by an extremely low gate oxide field even with a negative gate voltage. The low R onA was sustained as V th increases. The R onA values at V G =25 V (E ox =3.2 MV/cm) and V G =20V (E ox =2.5 MV/cm), respectively, for the 3mm × 3mm device were 2.4 and 2.8 mΩcm 2 with a lowest V th of 2.4 V, and 3.1 and 4.4 mΩcm 2 with a high V th of 5.9 V.</description><subject>Electrons</subject><subject>Epitaxial growth</subject><subject>IE-UMOSFET</subject><subject>JFET</subject><subject>JFETs</subject><subject>Logic gates</subject><subject>MOSFET</subject><subject>on-resistance</subject><subject>Resistance</subject><subject>Shielding</subject><subject>Silicon carbide</subject><subject>Threshold voltage</subject><subject>Trench</subject><subject>UMOSFET</subject><issn>1662-9752</issn><issn>0255-5476</issn><issn>1662-9752</issn><isbn>3035730431</isbn><isbn>9783035730432</isbn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2017</creationdate><recordtype>article</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><sourceid>ABUWG</sourceid><sourceid>AFKRA</sourceid><sourceid>AZQEC</sourceid><sourceid>BENPR</sourceid><sourceid>CCPQU</sourceid><sourceid>DWQXO</sourceid><sourceid>GNUQQ</sourceid><recordid>eNqNkE1LxDAQhqMo-PkLvAQEb62TpE2biyjLui4oHla9hjSd2sjaapO1-O-NrOgePQwzDC_PCw8hZwzSDHh5Po5j6q3DLrjG2bTDcH63uE5LVaSZKrbIgQCRFwIywbbJPpOSJ6rI-c7GvUcOvH8BEKxkcp_MGAegT3ThJnQ-TR7v7hfX0wc6utDSZT_SvksG9M4H01mkpqtp655bGtr4bftlTT_6ZTDPeER2G7P0ePyzD8lj5Exuktv72XxydZtYkfMiKRlXNleSYwNVDirPVFlxU0k0toYaeCWLspKKZSh5UzbWKJQCFbCiqeOIQ3K65r4N_fsKfdAv_WroYqVmCoBzYDnE1MU6ZYfe-wEb_Ta4VzN8agb626SOJvWfSR1N6mhSR5M6moyAyzUgDKbzAW270fNfxMka4RDxt79QnAmWiy9mj4ky</recordid><startdate>20170515</startdate><enddate>20170515</enddate><creator>Harada, S.</creator><creator>Kobayashi, Y.</creator><creator>Kinoshita, A.</creator><creator>Ohse, N.</creator><creator>Kojima, T.</creator><creator>Iwaya, M.</creator><creator>Shiomi, H.</creator><creator>Kitai, H.</creator><creator>Kyogoku, S.</creator><creator>Ariyoshi, K.</creator><creator>Onishi, Y.</creator><creator>Kimura, H.</creator><general>Trans Tech Publications Ltd</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>3V.</scope><scope>7SR</scope><scope>7XB</scope><scope>88I</scope><scope>8BQ</scope><scope>8FD</scope><scope>8FE</scope><scope>8FG</scope><scope>8FK</scope><scope>ABJCF</scope><scope>ABUWG</scope><scope>AFKRA</scope><scope>AZQEC</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>CCPQU</scope><scope>D1I</scope><scope>DWQXO</scope><scope>GNUQQ</scope><scope>HCIFZ</scope><scope>JG9</scope><scope>KB.</scope><scope>M2P</scope><scope>PDBOC</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>PRINS</scope><scope>Q9U</scope><orcidid>https://orcid.org/0000-0002-0053-4606</orcidid></search><sort><creationdate>20170515</creationdate><title>1200 V SiC IE-UMOSFET with low on-resistance and high threshold voltage</title><author>Harada, S. ; Kobayashi, Y. ; Kinoshita, A. ; Ohse, N. ; Kojima, T. ; Iwaya, M. ; Shiomi, H. ; Kitai, H. ; Kyogoku, S. ; Ariyoshi, K. ; Onishi, Y. ; Kimura, H.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c3527-8129c5962ef0b5095498b2ab6eacd0d02b678b6914e62f8fca9e63e9017fd17f3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2017</creationdate><topic>Electrons</topic><topic>Epitaxial growth</topic><topic>IE-UMOSFET</topic><topic>JFET</topic><topic>JFETs</topic><topic>Logic gates</topic><topic>MOSFET</topic><topic>on-resistance</topic><topic>Resistance</topic><topic>Shielding</topic><topic>Silicon carbide</topic><topic>Threshold voltage</topic><topic>Trench</topic><topic>UMOSFET</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Harada, S.</creatorcontrib><creatorcontrib>Kobayashi, Y.</creatorcontrib><creatorcontrib>Kinoshita, A.</creatorcontrib><creatorcontrib>Ohse, N.</creatorcontrib><creatorcontrib>Kojima, T.</creatorcontrib><creatorcontrib>Iwaya, M.</creatorcontrib><creatorcontrib>Shiomi, H.</creatorcontrib><creatorcontrib>Kitai, H.</creatorcontrib><creatorcontrib>Kyogoku, S.</creatorcontrib><creatorcontrib>Ariyoshi, K.</creatorcontrib><creatorcontrib>Onishi, Y.</creatorcontrib><creatorcontrib>Kimura, H.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection><collection>CrossRef</collection><collection>ProQuest Central (Corporate)</collection><collection>Engineered Materials Abstracts</collection><collection>ProQuest Central (purchase pre-March 2016)</collection><collection>Science Database (Alumni Edition)</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>ProQuest SciTech Collection</collection><collection>ProQuest Technology Collection</collection><collection>ProQuest Central (Alumni) (purchase pre-March 2016)</collection><collection>Materials Science & Engineering Collection</collection><collection>ProQuest Central (Alumni Edition)</collection><collection>ProQuest Central UK/Ireland</collection><collection>ProQuest Central Essentials</collection><collection>ProQuest Central</collection><collection>Technology Collection (ProQuest)</collection><collection>ProQuest One Community College</collection><collection>ProQuest Materials Science Collection</collection><collection>ProQuest Central Korea</collection><collection>ProQuest Central Student</collection><collection>SciTech Premium Collection</collection><collection>Materials Research Database</collection><collection>Materials Science Database</collection><collection>Science Database (ProQuest)</collection><collection>Materials Science Collection</collection><collection>ProQuest One Academic Eastern Edition (DO NOT USE)</collection><collection>ProQuest One Academic</collection><collection>ProQuest One Academic UKI Edition</collection><collection>ProQuest Central China</collection><collection>ProQuest Central Basic</collection><jtitle>2016 European Conference on Silicon Carbide & Related Materials (ECSCRM)</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Harada, S.</au><au>Kobayashi, Y.</au><au>Kinoshita, A.</au><au>Ohse, N.</au><au>Kojima, T.</au><au>Iwaya, M.</au><au>Shiomi, H.</au><au>Kitai, H.</au><au>Kyogoku, S.</au><au>Ariyoshi, K.</au><au>Onishi, Y.</au><au>Kimura, H.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>1200 V SiC IE-UMOSFET with low on-resistance and high threshold voltage</atitle><jtitle>2016 European Conference on Silicon Carbide & Related Materials (ECSCRM)</jtitle><stitle>ECSCRM</stitle><date>2017-05-15</date><risdate>2017</risdate><volume>897</volume><spage>1</spage><epage>1</epage><pages>1-1</pages><issn>1662-9752</issn><issn>0255-5476</issn><eissn>1662-9752</eissn><eisbn>3035730431</eisbn><eisbn>9783035730432</eisbn><abstract>A critical issue with the SiC UMOSFET is the need to develop a shielding structure for the gate oxide at the trench bottom without any increase in the JFET resistance. This study describes our new UMOSFET named IE-UMOSFET, which we developed to cope with this trade-off. A simulation showed that a low on-resistance is accompanied by an extremely low gate oxide field even with a negative gate voltage. The low R onA was sustained as V th increases. The R onA values at V G =25 V (E ox =3.2 MV/cm) and V G =20V (E ox =2.5 MV/cm), respectively, for the 3mm × 3mm device were 2.4 and 2.8 mΩcm 2 with a lowest V th of 2.4 V, and 3.1 and 4.4 mΩcm 2 with a high V th of 5.9 V.</abstract><cop>Pfaffikon</cop><pub>Trans Tech Publications Ltd</pub><doi>10.4028/www.scientific.net/MSF.897.497</doi><tpages>1</tpages><orcidid>https://orcid.org/0000-0002-0053-4606</orcidid></addata></record> |
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| subjects | Electrons Epitaxial growth IE-UMOSFET JFET JFETs Logic gates MOSFET on-resistance Resistance Shielding Silicon carbide Threshold voltage Trench UMOSFET |
| title | 1200 V SiC IE-UMOSFET with low on-resistance and high threshold voltage |
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